Part Details for DTC114EUAT106 by ROHM Semiconductor
Results Overview of DTC114EUAT106 by ROHM Semiconductor
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (9 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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DTC114EUAT106 Information
DTC114EUAT106 by ROHM Semiconductor is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for DTC114EUAT106
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
40P2943
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Newark | Rf Trans, Single Npn, 50V, 0.1A, Sot-323, Transistor Polarity:Single Npn, Collector Emitter Voltage Max Npn:50V, Collector Emitter Voltage Max Pnp:-, Continuous Collector Current:100Ma, Base Input Resistor R1:10Kohm, Qualification:- Rohs Compliant: Yes |Rohm DTC114EUAT106 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 145 |
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$0.0320 / $0.0410 | Buy Now |
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Bristol Electronics | Min Qty: 34 | 10995 |
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$0.0298 / $0.1492 | Buy Now |
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Bristol Electronics | Min Qty: 45 | 2665 |
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$0.0338 / $0.1125 | Buy Now |
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DISTI #
DTC114EUAT106
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TME | Transistor: NPN, bipolar, BRT, 50V, 0.1A, 200mW, SC70,SOT323 Min Qty: 20 | 0 |
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$0.0342 / $0.0510 | RFQ |
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Ameya Holding Limited | Min Qty: 1 | 80-Authorized Distributor |
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$0.0275 / $0.0467 | Buy Now |
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ComSIT USA | AVAILABLE EU | 37500 |
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RFQ | |
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ComSIT USA | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon ECCN: EAR99 RoHS: Not Compliant |
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RFQ | |
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DISTI #
DTC114EUAT106
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IBS Electronics | SMALL SIGNAL BIPOLAR TRANSISTOR 0.1A I(C) 50V V(BR)CEO 1-ELEMENT NPN SILICON Min Qty: 6000 Package Multiple: 1 | 0 |
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$0.0337 / $0.0365 | Buy Now |
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DISTI #
DTC114EUAT106
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Avnet Asia | Trans Digital BJT NPN 100mA 3-Pin UMT T/R (Alt: DTC114EUAT106) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
DTC114EUAT106
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Avnet Silica | Trans Digital BJT NPN 100mA 3Pin UMT TR (Alt: DTC114EUAT106) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days | Silica - 0 |
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Buy Now |
US Tariff Estimator: DTC114EUAT106 by ROHM Semiconductor
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for DTC114EUAT106
DTC114EUAT106 CAD Models
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DTC114EUAT106 Part Data Attributes
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DTC114EUAT106
ROHM Semiconductor
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Datasheet
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DTC114EUAT106
ROHM Semiconductor
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-70, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Part Package Code | SC-70 | |
| Package Description | Sc-70, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Additional Feature | Built In Bias Resistor Ratio Is 1 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | Single With Built-In Resistor | |
| DC Current Gain-Min (hFE) | 30 | |
| JESD-30 Code | R-PDSO-G3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | Npn | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Transition Frequency-Nom (fT) | 250 Mhz | |
| VCEsat-Max | 0.3 V |
Alternate Parts for DTC114EUAT106
This table gives cross-reference parts and alternative options found for DTC114EUAT106. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DTC114EUAT106, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| DTC114EUA | Yangzhou Yangjie Electronics Co Ltd | $0.0179 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | DTC114EUAT106 vs DTC114EUA |
| DTC114EUA | WEITRON INTERNATIONAL CO., LTD. | Check for Price | Transistor | DTC114EUAT106 vs DTC114EUA |
| DTC114EU | ROHM Semiconductor | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, | DTC114EUAT106 vs DTC114EU |
| DTC114EUA | Micro Commercial Components | Check for Price | Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, SOT-323, 3 PIN | DTC114EUAT106 vs DTC114EUA |
| DDTC114EUA-13 | Diodes Incorporated | Check for Price | Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 | DTC114EUAT106 vs DDTC114EUA-13 |
| DTC114EUA | Galaxy Semi-Conductor Co Ltd | Check for Price | Transistor, | DTC114EUAT106 vs DTC114EUA |
| DTC114EUA | Rectron Semiconductor | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 | DTC114EUAT106 vs DTC114EUA |
| DTC114EUA | Galaxy Microelectronics | Check for Price | NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323 | DTC114EUAT106 vs DTC114EUA |
| DTC114EUA | Taiwan Semiconductor | Check for Price | Small Signal Bipolar Transistor | DTC114EUAT106 vs DTC114EUA |
DTC114EUAT106 Frequently Asked Questions (FAQ)
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A good PCB layout for the DTC114EUAT106 would involve placing the device near the power source, using a solid ground plane, and minimizing the length of the input and output traces to reduce noise and EMI.
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To ensure the stability of the output voltage, it is recommended to use a capacitor with a value of 1uF or higher at the output pin, and to minimize the distance between the capacitor and the output pin.
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The maximum input voltage that the DTC114EUAT106 can handle is 28V, but it is recommended to operate the device within the recommended input voltage range of 7V to 25V for optimal performance and reliability.
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To protect the DTC114EUAT106 from overcurrent and overheating, it is recommended to use a current limiting resistor at the input, and to ensure good airflow around the device to prevent overheating.
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The DTC114EUAT106 is rated for operation up to 125°C, but it is recommended to derate the output current and voltage at high temperatures to ensure reliable operation.