Datasheets
DU28200M by:

2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

Part Details for DU28200M by TE Connectivity

Overview of DU28200M by TE Connectivity

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Automotive Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for DU28200M

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DU28200M Part Data Attributes

DU28200M TE Connectivity
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DU28200M TE Connectivity 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer TE CONNECTIVITY LTD
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 20 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 389 W
Power Gain-Min (Gp) 13 dB
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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