Part Details for EN29LV800AB-70TC by Eon Silicon Solution Inc
Results Overview of EN29LV800AB-70TC by Eon Silicon Solution Inc
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- Part Data Attributes: (Available)
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EN29LV800AB-70TC Information
EN29LV800AB-70TC by Eon Silicon Solution Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
US Tariff Estimator: EN29LV800AB-70TC by Eon Silicon Solution Inc
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for EN29LV800AB-70TC
EN29LV800AB-70TC Part Data Attributes
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EN29LV800AB-70TC
Eon Silicon Solution Inc
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Datasheet
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EN29LV800AB-70TC
Eon Silicon Solution Inc
Flash, 512KX16, 70ns, PDSO48
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | EON SILICON SOLUTION INC | |
| Package Description | TSSOP, TSSOP48,.8,20 | |
| Reach Compliance Code | Unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Access Time-Max | 70 ns | |
| Alternate Memory Width | 8 | |
| Boot Block | BOTTOM | |
| Command User Interface | YES | |
| Data Polling | YES | |
| Endurance | 1000000 Write/Erase Cycles | |
| JESD-30 Code | R-PDSO-G48 | |
| JESD-609 Code | e0 | |
| Memory Density | 8388608 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 16 | |
| Number of Sectors/Size | 1,2,1,15 | |
| Number of Terminals | 48 | |
| Number of Words | 524288 words | |
| Number of Words Code | 512000 | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 512KX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP48,.8,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Sector Size | 16K,8K,32K,64K | |
| Standby Current-Max | 0.000005 A | |
| Supply Current-Max | 0.03 mA | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Toggle Bit | YES | |
| Type | NOR TYPE |
EN29LV800AB-70TC Frequently Asked Questions (FAQ)
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A good PCB layout for the EN29LV800AB-70TC should consider signal integrity, power supply decoupling, and thermal management. Ensure that the VCC and VSS pins are connected to a solid power plane, and use a 0.1uF decoupling capacitor between VCC and VSS. Keep the signal traces short and away from noise sources. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
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During power-up, the EN29LV800AB-70TC requires a minimum of 10ms hold cycle to ensure proper initialization. During power-down, the device should be in a standby mode (CE# = 1) before power is removed. A recommended power-up sequence is: VCC, then CE# = 0, then OE# = 0. A recommended power-down sequence is: OE# = 1, then CE# = 1, then VCC.
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The EN29LV800AB-70TC is rated for operation from -40°C to +85°C. However, it's recommended to operate the device within a temperature range of 0°C to 70°C for optimal performance and reliability.
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The EN29LV800AB-70TC has a write protection feature that can be enabled by setting the WP# pin to VCC. To implement a reliable write protection mechanism, use a pull-up resistor on the WP# pin and connect it to a GPIO pin on the microcontroller. This allows the microcontroller to control the write protection feature.
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The EN29LV800AB-70TC supports a chip erase command (0x60h) that erases the entire memory array. To perform a chip erase, send the command sequence: CE# = 0, OE# = 1, WE# = 0, then send the chip erase command (0x60h) on the data bus. Wait for the erase operation to complete (tWHWH = 10ms typical).