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Power Field-Effect Transistor, 36A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-11
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
EPC2001C by Efficient Power Conversion is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
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Chip Stock | PowerField-EffectTransistor,36AI(D),100V,0.007ohm,1-Element,N-Channel,GalliumNitride,Metal-oxide... | 14478 |
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EPC2001C
Efficient Power Conversion
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Datasheet
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EPC2001C
Efficient Power Conversion
Power Field-Effect Transistor, 36A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-11
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | EFFICIENT POWER CONVERSION CORP | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, DIE-11 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Efficient Power Conversion | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.007 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XXUC-X11 | |
| JESD-609 Code | e2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 11 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN SILVER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UNSPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | GALLIUM NITRIDE |
This table gives cross-reference parts and alternative options found for EPC2001C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EPC2001C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STD100N10F7 | STMicroelectronics | $1.2431 | N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in DPAK package | EPC2001C vs STD100N10F7 |
The EPC2001C has an operating temperature range of -55°C to 150°C, making it suitable for high-reliability applications.
To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet, and consider using a voltage regulator or biasing circuit to maintain stable operation.
For optimal thermal performance, use a multi-layer PCB with thermal vias, and consider using a heat sink or thermal interface material to dissipate heat. Follow the recommended PCB layout guidelines in the datasheet and application notes.
Handle the EPC2001C with ESD-safe materials and tools, and consider using ESD protection devices or circuits in your design. Also, follow proper storage and handling procedures to prevent damage from moisture, vibration, and other environmental factors.
The recommended drive circuits and gate resistors for the EPC2001C are outlined in the datasheet and application notes. In general, use a low-impedance gate driver with a suitable gate resistor to ensure fast switching times and minimal ringing.