Part Details for EPC2032 by Efficient Power Conversion
Overview of EPC2032 by Efficient Power Conversion
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for EPC2032
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
917-1126-1-ND
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DigiKey | GANFET N-CH 100V 48A DIE Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2506 In Stock |
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$3.8457 / $7.2400 | Buy Now |
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NexGen Digital | 2829 |
|
RFQ |
Part Details for EPC2032
EPC2032 CAD Models
EPC2032 Part Data Attributes
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EPC2032
Efficient Power Conversion
Buy Now
Datasheet
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EPC2032
Efficient Power Conversion
TRANS GAN 100V 48A BUMPED DIE
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | EFFICIENT POWER CONVERSION CORP | |
| Package Description | DIE-24 | |
| Reach Compliance Code | unknown | |
| Samacsys Manufacturer | Efficient Power Conversion | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 48 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Feedback Cap-Max (Crss) | 14 pF | |
| JESD-30 Code | R-XUUC-X24 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 24 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Surface Mount | YES | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | GALLIUM NITRIDE |