Part Details for F4150R12KS4BOSA1 by Infineon Technologies AG
Overview of F4150R12KS4BOSA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for F4150R12KS4BOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC8779
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Newark | Igbt, Module, N-Ch, 1.2Kv, 180A, Continuous Collector Current:180A, Collector Emitter Saturation Voltage:3.2V, Power Dissipation:960W, Operating Temperature Max:125°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon F4150R12KS4BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$294.2900 / $314.1900 | Buy Now |
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DISTI #
F4150R12KS4BOSA1-ND
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DigiKey | IGBT MOD 1200V 180A 960W Min Qty: 1 Lead time: 16 Weeks Container: Bulk |
14 In Stock |
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$230.0000 / $245.5600 | Buy Now |
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DISTI #
F4150R12KS4BOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 180A ±20V Screw Tray - Trays (Alt: F4150R12KS4BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$265.3910 | Buy Now |
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Rochester Electronics | LOW POWER ECONO RoHS: Compliant Status: Active Min Qty: 1 | 25 |
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$212.2400 / $249.7000 | Buy Now |
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DISTI #
F4150R12KS4BOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 180A ±20V Screw Tray - Trays (Alt: F4150R12KS4BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$265.3910 | Buy Now |
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DISTI #
F4150R12KS4BOSA1
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TME | Module: IGBT, transistor/transistor, IGBT half-bridge x2, 960W Min Qty: 1 | 0 |
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$246.7700 / $274.5500 | RFQ |
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DISTI #
F4150R12KS4BOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 180A ±20V Screw Tray - Trays (Alt: F4150R12KS4BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$326.5075 | Buy Now |
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DISTI #
SP000100435
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EBV Elektronik | Transistor IGBT Module N-CH 1200V 180A �20V Screw Tray (Alt: SP000100435) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days | EBV - 0 |
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Buy Now | |
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DISTI #
2726110
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element14 Asia-Pacific | IGBT, MODULE, N-CH, 1.2KV, 180A RoHS: Compliant Min Qty: 1 Container: Each | 17 |
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$297.4196 / $316.1636 | Buy Now |
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DISTI #
2726110
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Farnell | IGBT, MODULE, N-CH, 1.2KV, 180A RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each | 17 |
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$226.3004 | Buy Now |
Part Details for F4150R12KS4BOSA1
F4150R12KS4BOSA1 CAD Models
F4150R12KS4BOSA1 Part Data Attributes
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F4150R12KS4BOSA1
Infineon Technologies AG
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Datasheet
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F4150R12KS4BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-26
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-XUFM-X26 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 180 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| JESD-30 Code | R-XUFM-X26 | |
| Number of Elements | 4 | |
| Number of Terminals | 26 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 390 ns | |
| Turn-on Time-Nom (ton) | 190 ns |