Part Details for FCB20N60 by onsemi
Overview of FCB20N60 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FCB20N60
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
93K5944
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Newark | Mosfet, N Channel, 600V, 20A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:20A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FCB20N60 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 9 |
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$4.1600 / $6.5400 | Buy Now |
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DISTI #
86AK4912
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Newark | Mosfet, N-Ch, 600V, 20A, To-263 Rohs Compliant: Yes |Onsemi FCB20N60 Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$2.5800 / $3.1500 | Buy Now |
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DISTI #
1095000
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element14 Asia-Pacific | MOSFET, N, D2-PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape | 89 |
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$3.0547 / $5.7129 | Buy Now |
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DISTI #
1095000RL
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Farnell | MOSFET, N, D2-PAK RoHS: Compliant Min Qty: 10 Lead time: 17 Weeks, 1 Days Container: Reel | 9 |
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$2.9835 / $4.6131 | Buy Now |
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DISTI #
1095000
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Farnell | MOSFET, N, D2-PAK RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 1 Days Container: Cut Tape | 9 |
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$2.9835 / $6.1676 | Buy Now |
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DISTI #
4319629
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Farnell | MOSFET, N-CH, 600V, 20A, TO-263 RoHS: Compliant Min Qty: 800 Lead time: 17 Weeks, 1 Days Container: Reel | 0 |
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$2.8581 / $2.9208 | Buy Now |
Part Details for FCB20N60
FCB20N60 CAD Models
FCB20N60 Part Data Attributes
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FCB20N60
onsemi
Buy Now
Datasheet
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Compare Parts:
FCB20N60
onsemi
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | ROHS COMPLIANT, D2PAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FCB20N60
This table gives cross-reference parts and alternative options found for FCB20N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCB20N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STB25NM60N | 21A, 600V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | STMicroelectronics | FCB20N60 vs STB25NM60N |
| FCB20N60TM | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, ROHS COMPLIANT, D2PAK-3 | Fairchild Semiconductor Corporation | FCB20N60 vs FCB20N60TM |
| STB23NM60ND | N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) D2PAK | STMicroelectronics | FCB20N60 vs STB23NM60ND |
| APT20N60SCFG | Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3 | Microsemi Corporation | FCB20N60 vs APT20N60SCFG |
| FCB20N60TM | 20A, 600V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, LEAD FREE, D2PAK-3 | Rochester Electronics LLC | FCB20N60 vs FCB20N60TM |
| FCB20N60 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, ROHS COMPLIANT, D2PAK-3 | Fairchild Semiconductor Corporation | FCB20N60 vs FCB20N60 |