Part Details for FCH104N60F_F085 by onsemi
Overview of FCH104N60F_F085 by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| UPD78F0856MAA-FAA-G | Renesas Electronics Corporation | 8-bit Microcontrollers (Non Promotion), , / |
Price & Stock for FCH104N60F_F085
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
FCH104N60F-F085
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Avnet Americas | Trans MOSFET N-CH 600V 37A 3-Pin TO-247 Rail - Rail/Tube (Alt: FCH104N60F-F085) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 159 Partner Stock |
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$3.1124 / $3.7148 | Buy Now |
|
DISTI #
FCH104N60F-F085
|
Avnet Americas | Trans MOSFET N-CH 600V 37A 3-Pin TO-247 Rail - Rail/Tube (Alt: FCH104N60F-F085) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 42 Weeks, 0 Days Container: Tube | 0 |
|
$2.7300 | Buy Now |
|
DISTI #
FCH104N60F-F085
|
Avnet Silica | Trans MOSFET N-CH 600V 37A 3-Pin TO-247 Rail (Alt: FCH104N60F-F085) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 37 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for FCH104N60F_F085
FCH104N60F_F085 CAD Models
FCH104N60F_F085 Part Data Attributes
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FCH104N60F_F085
onsemi
Buy Now
Datasheet
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Compare Parts:
FCH104N60F_F085
onsemi
600V, 37A, 91mΩ, TO-247 N-Channel SuperFET II™, TO-247 3L, 3600-RAIL
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Manufacturer Package Code | TO247A03 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 809 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 37 A | |
| Drain-source On Resistance-Max | 0.104 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 357 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 131 ns | |
| Turn-on Time-Max (ton) | 78 ns |