Part Details for FCPF190N60E by onsemi
Results Overview of FCPF190N60E by onsemi
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FCPF190N60E Information
FCPF190N60E by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FCPF190N60E
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
55W4067
|
Newark | Power Mosfet, N Channel, 20.6 A, 600 V, 0.16 Ohm, 10 V, 2.5 V Rohs Compliant: Yes |Onsemi FCPF190N60E RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1469 |
|
$3.2100 | Buy Now |
|
DISTI #
FCPF190N60E
|
Avnet Americas | - Rail/Tube (Alt: FCPF190N60E) COO: Korea (the Republic of) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
|
$1.8698 / $2.1369 | Buy Now |
|
DISTI #
FCPF190N60E
|
TME | Transistor: N-MOSFET, unipolar, 600V, 20.6A, Idm: 61.8A, 39W Min Qty: 1 | 0 |
|
$2.7300 / $4.4100 | RFQ |
|
DISTI #
FCPF190N60E
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1000 | 0 |
|
$1.8700 | Buy Now |
|
DISTI #
FCPF190N60E
|
Avnet Asia | (Alt: FCPF190N60E) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days | 0 |
|
RFQ | |
|
DISTI #
FCPF190N60E
|
Avnet Silica | (Alt: FCPF190N60E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
DISTI #
FCPF190N60E
|
EBV Elektronik | (Alt: FCPF190N60E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
Wuhan P&S | 600V, 20.6A, 190m��, N-Channel Power MOSFET, SUPERFET II, Easy Drive Min Qty: 1 | 114 |
|
$2.5300 / $5.2200 | Buy Now |
Part Details for FCPF190N60E
FCPF190N60E CAD Models
FCPF190N60E Part Data Attributes
|
|
FCPF190N60E
onsemi
Buy Now
Datasheet
|
Compare Parts:
FCPF190N60E
onsemi
Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-220-3 FullPak | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Configuration | Single | |
| Drain Current-Max (ID) | 20.6 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 39 W | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified |
FCPF190N60E Frequently Asked Questions (FAQ)
-
The maximum junction temperature of the FCPF190N60E is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
-
To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow around the heat sink.
-
The recommended gate drive voltage for the FCPF190N60E is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
-
Yes, the FCPF190N60E is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
-
To protect the FCPF190N60E from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.