Part Details for FDB045AN08A0 by Fairchild Semiconductor Corporation
Overview of FDB045AN08A0 by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDB045AN08A0
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 267 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 213 |
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$2.3502 / $3.8112 | Buy Now |
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Sense Electronic Company Limited | TO-263 | 614 |
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RFQ |
Part Details for FDB045AN08A0
FDB045AN08A0 CAD Models
FDB045AN08A0 Part Data Attributes:
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FDB045AN08A0
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDB045AN08A0
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Package Description | TO-263AB, 3 PIN | |
| Pin Count | 2 | |
| Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 600 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 19 A | |
| Drain-source On Resistance-Max | 0.0045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 310 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDB045AN08A0
This table gives cross-reference parts and alternative options found for FDB045AN08A0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB045AN08A0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HUF76409D3 | 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Rochester Electronics LLC | FDB045AN08A0 vs HUF76409D3 |
| BUK9575-55A | TRANSISTOR 20 A, 55 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | NXP Semiconductors | FDB045AN08A0 vs BUK9575-55A |
| HUF76413D3S | 20A, 60V, 0.061ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | FDB045AN08A0 vs HUF76413D3S |
| FDD3860 | Power Field-Effect Transistor, 6.2A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Fairchild Semiconductor Corporation | FDB045AN08A0 vs FDD3860 |
| MTD20N06HD | 20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | FDB045AN08A0 vs MTD20N06HD |
| IRF9Z34STRRPBF | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | FDB045AN08A0 vs IRF9Z34STRRPBF |
| HUF76409D3 | 17A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | FDB045AN08A0 vs HUF76409D3 |
| AUIRF9Z34N | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | International Rectifier | FDB045AN08A0 vs AUIRF9Z34N |
| RFD14N05_NL | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN | Rochester Electronics LLC | FDB045AN08A0 vs RFD14N05_NL |
| HUFA76419D3S | 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | FDB045AN08A0 vs HUFA76419D3S |