Part Details for FDB2532_F085 by onsemi
Overview of FDB2532_F085 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
UPD78F0856MAA-FAA-G | Renesas Electronics Corporation | 8-bit Microcontrollers (Non Promotion), , / |
Price & Stock for FDB2532_F085
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDB2532-F085
|
Avnet Americas | Trans MOSFET N-CH 150V 8A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB2532-F085) RoHS: Compliant Min Qty: 271 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 520 Partner Stock |
|
$2.2940 / $2.7380 | Buy Now |
DISTI #
FDB2532-F085
|
Avnet Americas | Trans MOSFET N-CH 150V 8A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB2532-F085) RoHS: Compliant Min Qty: 136 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 403 Partner Stock |
|
$2.2940 / $2.7380 | Buy Now |
Part Details for FDB2532_F085
FDB2532_F085 CAD Models
FDB2532_F085 Part Data Attributes
|
FDB2532_F085
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB2532_F085
onsemi
150V, 79A, 14mΩ, D2PAK N-Channel PowerTrench®, TO-263 2L (D2PAK), 800-TAPE REEL
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Manufacturer Package Code | TO263A02 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 400 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.016 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 310 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |