There are no models available for this part yet.
Overview of FDB2670S62Z by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Internet of Things (IoT)
Environmental Monitoring
Space Technology
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Renewable Energy
Electronic Manufacturing
Communication and Networking
Robotics and Drones
CAD Models for FDB2670S62Z by Fairchild Semiconductor Corporation
Part Data Attributes for FDB2670S62Z by Fairchild Semiconductor Corporation
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|---|---|
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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FAIRCHILD SEMICONDUCTOR CORP
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Package Description
|
SMALL OUTLINE, R-PSSO-G2
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Avalanche Energy Rating (Eas)
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375 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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200 V
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Drain Current-Max (ID)
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19 A
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Drain-source On Resistance-Max
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0.13 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-263AB
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JESD-30 Code
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R-PSSO-G2
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
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40 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for FDB2670S62Z
This table gives cross-reference parts and alternative options found for FDB2670S62Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB2670S62Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDD2670 | Power Field-Effect Transistor, 3.6A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDB2670S62Z vs FDD2670 |
| HUF75925D3ST | 11A, 200V, 0.275ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN | Rochester Electronics LLC | FDB2670S62Z vs HUF75925D3ST |
| SI7450DP-T1-GE3 | Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | FDB2670S62Z vs SI7450DP-T1-GE3 |
| PSMN130-200D,118 | N-channel TrenchMOS SiliconMAX standard level FET@en-us DPAK 3-Pin | Nexperia | FDB2670S62Z vs PSMN130-200D,118 |
| 934057072118 | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power | NXP Semiconductors | FDB2670S62Z vs 934057072118 |
| FQD18N20V2TF | 15A, 200V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3 | Rochester Electronics LLC | FDB2670S62Z vs FQD18N20V2TF |
| STD20N20T4 | 18A, 200V, 0.125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 | STMicroelectronics | FDB2670S62Z vs STD20N20T4 |
| STD20N20 | 18A, 200V, 0.125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 | STMicroelectronics | FDB2670S62Z vs STD20N20 |
| PSMN130-200D/T3 | TRANSISTOR 20 A, 200 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power | NXP Semiconductors | FDB2670S62Z vs PSMN130-200D/T3 |
| EPC2012C | Power Field-Effect Transistor, 5A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4 | Efficient Power Conversion | FDB2670S62Z vs EPC2012C |