Transistors
FDB6644S
Fairchild Semiconductor Corporation
Description: Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Overview of FDB6644S by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Renewable Energy Automotive

Price & Stock for FDB6644S by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   Min Qty: 1 715
  • 1 $5.6000
  • 6 $3.6400
  • 15 $2.8000
  • 46 $2.6135
  • 97 $2.4265
  • 197 $2.2960
$2.2960 / $5.6000 Buy Now
Quest Components 55 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 3399
Buy Now
Quest Components 55 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 572
  • 1 $7.5000
  • 54 $3.5000
  • 144 $3.2500
$3.2500 / $7.5000 Buy Now

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Part Data Attributes for FDB6644S by Fairchild Semiconductor Corporation

FDB6644S
Fairchild Semiconductor Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
D2PAK
Package Description
D2PAK-3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
55 A
Drain-source On Resistance-Max
0.01 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
125 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
60 W
Pulsed Drain Current-Max (IDM)
150 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn85Pb15)
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. FDB6644S
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
    VS

Alternate Parts for FDB6644S

This table gives cross-reference parts and alternative options found for FDB6644S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB6644S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FDB7030BLS Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FDB6644S vs FDB7030BLS
FDB6670S 62A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 Rochester Electronics LLC FDB6644S vs FDB6670S
FDB6670AS 62A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN Rochester Electronics LLC FDB6644S vs FDB6670AS
FDB6670S_NL Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FDB6644S vs FDB6670S_NL

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