Part Details for FDB6676L99Z by Fairchild Semiconductor Corporation
Overview of FDB6676L99Z by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FDB6676L99Z
FDB6676L99Z CAD Models
FDB6676L99Z Part Data Attributes
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FDB6676L99Z
Fairchild Semiconductor Corporation
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Datasheet
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FDB6676L99Z
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 370 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.006 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 240 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDB6676L99Z
This table gives cross-reference parts and alternative options found for FDB6676L99Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB6676L99Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUK9M6R6-30EX | BUK9M6R6-30E - N-channel 30 V, 6.6 mΩ logic level MOSFET in LFPAK33@en-us | Nexperia | FDB6676L99Z vs BUK9M6R6-30EX |
IPB042N03LG | Power Field-Effect Transistor, 70A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FDB6676L99Z vs IPB042N03LG |
BUK7506-30127 | TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | FDB6676L99Z vs BUK7506-30127 |
MDU1514URH | Power Field-Effect Transistor, 66.3A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN56, 8 PIN | MagnaChip Semiconductor Ltd | FDB6676L99Z vs MDU1514URH |
BUK9606-30118 | TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | FDB6676L99Z vs BUK9606-30118 |
NTB75N03-06G | TRANSISTOR 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418AA-01, D2PAK-3, FET General Purpose Power | onsemi | FDB6676L99Z vs NTB75N03-06G |
EMB06N03H | Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8 | Excelliance MOS Corporation | FDB6676L99Z vs EMB06N03H |
BUK7606-30118 | TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | FDB6676L99Z vs BUK7606-30118 |
BUK7606-30,118 | 75A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | FDB6676L99Z vs BUK7606-30,118 |
NTB75N03-006 | Power MOSFET 30 V 75 A 8 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 50-TUBE | onsemi | FDB6676L99Z vs NTB75N03-006 |