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N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ, 800-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73AK0988
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Newark | 30V N-Ch. Fet, 9 Mo, To263, T , Rohs Com |Onsemi FDB7030BL Min Qty: 790 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.4190 / $0.6130 | Buy Now |
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FDB7030BL
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB7030BL
onsemi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ, 800-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-263AB, 3 PIN | |
Manufacturer Package Code | 418AJ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 73 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.009 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 65 W | |
Pulsed Drain Current-Max (IDM) | 180 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDB7030BL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB7030BL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF3707SPBF | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | FDB7030BL vs IRF3707SPBF |
IRF3707STRRPBF | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | FDB7030BL vs IRF3707STRRPBF |
IRF3707ZL | Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | International Rectifier | FDB7030BL vs IRF3707ZL |
IRF3707ZCL | Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | International Rectifier | FDB7030BL vs IRF3707ZCL |
IRF3707ZPBF | Power Field-Effect Transistor, 42A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | FDB7030BL vs IRF3707ZPBF |
FDB6670SL86Z | Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FDB7030BL vs FDB6670SL86Z |
IRL3103LPBF | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | International Rectifier | FDB7030BL vs IRL3103LPBF |
IRF3707STRL | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | FDB7030BL vs IRF3707STRL |
IRL3103 | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | FDB7030BL vs IRL3103 |
IRF3707ZCLPBF | Power Field-Effect Transistor, 42A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | International Rectifier | FDB7030BL vs IRF3707ZCLPBF |