Datasheets
FDB8443_F085 by:

40V, 80A, 2.3mΩ, D2PAK N-Channel PowerTrench®, TO-263 2L (D2PAK), 800-TAPE REEL

Part Details for FDB8443_F085 by onsemi

Overview of FDB8443_F085 by onsemi

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Applications Industrial Automation Energy and Power Systems Renewable Energy Robotics and Drones

Part Details for FDB8443_F085

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FDB8443_F085 Part Data Attributes:

FDB8443_F085 onsemi
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FDB8443_F085 onsemi 40V, 80A, 2.3mΩ, D2PAK N-Channel PowerTrench®, TO-263 2L (D2PAK), 800-TAPE REEL
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Manufacturer Package Code TO263A02
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 531 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.003 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 188 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDB8443_F085

This table gives cross-reference parts and alternative options found for FDB8443_F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB8443_F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDB8443 N-Channel PowerTrench® MOSFET 40V, 182A, 3mΩ, 800-REEL onsemi FDB8443_F085 vs FDB8443
FDB8443 Power Field-Effect Transistor, 25A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3 Fairchild Semiconductor Corporation FDB8443_F085 vs FDB8443
FDB8443_F085 Power Field-Effect Transistor, 25A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3 Fairchild Semiconductor Corporation FDB8443_F085 vs FDB8443_F085
Part Number Description Manufacturer Compare
FDB8443 N-Channel PowerTrench® MOSFET 40V, 182A, 3mΩ, 800-REEL onsemi FDB8443_F085 vs FDB8443
SI7456DP-T1-GE3 Power Field-Effect Transistor, 5.7A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8 Vishay Intertechnologies FDB8443_F085 vs SI7456DP-T1-GE3
SI7456DP-T1 Power Field-Effect Transistor, 5.7A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 Vishay Siliconix FDB8443_F085 vs SI7456DP-T1
SI7456DP-T1-E3 TRANSISTOR 5.7 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SO-8, FET General Purpose Power Vishay Siliconix FDB8443_F085 vs SI7456DP-T1-E3
SI7456DP-T1-E3 Power Field-Effect Transistor, 5.7A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8 Vishay Intertechnologies FDB8443_F085 vs SI7456DP-T1-E3

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