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Part Details for FDB8832 by onsemi
Results Overview of FDB8832 by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (4 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDB8832 Information
FDB8832 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDB8832
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
30M0736
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Newark | N Channel Mosfet, 30V, 80A To-263Ab, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:80A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Onsemi FDB8832 RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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Rochester Electronics | Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant Status: Obsolete Min Qty: 1 | 1648 |
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$1.6400 / $2.0500 | Buy Now |
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Chip Stock | N-ChannelLogicLevelPowerTrench®MOSFET,30V,80A,2.1mΩ | 2750 |
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RFQ | |
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Flip Electronics | Stock, Ship Today | 46387 |
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RFQ | |
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LCSC | 30V 80A 300W 1 N-Channel D2PAK(TO-263) Single FETs MOSFETs RoHS | 1 |
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$3.6296 / $5.5581 | Buy Now |
Part Details for FDB8832
FDB8832 CAD Models
FDB8832 Part Data Attributes
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FDB8832
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB8832
onsemi
N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ, D2PAK-3 / TO-263-2, 800-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | D2PAK-3 / TO-263-2 | |
| Package Description | Rohs Compliant Package-3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 1246 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.0022 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 300 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for FDB8832
This table gives cross-reference parts and alternative options found for FDB8832. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB8832, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDB8832-F085 | onsemi | Check for Price | N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified | FDB8832 vs FDB8832-F085 |
| FDB8832 | Rochester Electronics LLC | Check for Price | 34 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT PACKAGE-3 | FDB8832 vs FDB8832 |
| FDB8832_F085 | onsemi | Check for Price | 30V, 80A, 1.5mΩ, D2PAK, Logic Level N-Channel PowerTrench®, TO-263 2L (D2PAK), 800-TAPE REEL | FDB8832 vs FDB8832_F085 |
| FDB8832 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3 | FDB8832 vs FDB8832 |
FDB8832 Frequently Asked Questions (FAQ)
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The maximum power dissipation of the FDB8832 is 1.4W, but it can be limited by the thermal resistance of the package and the PCB design.
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To minimize EMI, keep the high-frequency traces short and away from the edges of the PCB, use a solid ground plane, and decouple the power supply with capacitors.
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The recommended operating voltage range for the FDB8832 is 2.5V to 5.5V, but it can operate down to 2.3V with reduced performance.
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Ensure the FDB8832 is properly biased by connecting the VCC pin to a stable voltage source, and the GND pin to a solid ground plane, and using a suitable bypass capacitor.
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The maximum frequency of operation for the FDB8832 is 100MHz, but it can be limited by the specific application and PCB design.