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N-Channel PowerTrench® MOSFET, 80V, 300A, 1.4mΩ, TO-LL 8L, 2000-REEL, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDBL86361-F085 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
07AH3883
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Newark | Mosfet, Aec-Q101, Nch, 300A, 80V, H-Psof, Transistor Polarity:N Channel, Continuous Drain Current Id:300A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0011Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Onsemi FDBL86361-F085 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 73 |
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$3.3200 / $6.2000 | Buy Now |
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DISTI #
48AC0869
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Newark | Nmos Toll 80V 1.4 Mohm Rohs Compliant: Yes |Onsemi FDBL86361-F085 RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$2.6700 / $3.4100 | Buy Now |
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DISTI #
FDBL86361-F085
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Avnet Americas | - Tape and Reel (Alt: FDBL86361-F085) COO: Korea (the Republic of) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$2.7106 / $3.0979 | Buy Now |
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DISTI #
FDBL86361-F085
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TME | Transistor: N-MOSFET, unipolar, 60V, 300A, 429W, H-PSOF8L Min Qty: 2000 | 0 |
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$3.5100 | RFQ |
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DISTI #
FDBL86361-F085
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2000 | 0 |
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$2.7100 | Buy Now |
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DISTI #
FDBL86361-F085
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Avnet Asia | (Alt: FDBL86361-F085) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 15 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
FDBL86361-F085
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Avnet Silica | (Alt: FDBL86361-F085) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 16 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Chip Stock | PowerMOSFET,NChannel,80V,300A,1.4Milliohms,MO-299A,8Pins,SurfaceMount | 41700 |
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RFQ | |
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DISTI #
FDBL86361-F085
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EBV Elektronik | (Alt: FDBL86361-F085) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 17 Weeks, 0 Days | EBV - 4000 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 26780 |
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RFQ |
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FDBL86361-F085
onsemi
Buy Now
Datasheet
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FDBL86361-F085
onsemi
N-Channel PowerTrench® MOSFET, 80V, 300A, 1.4mΩ, TO-LL 8L, 2000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-LL 8L | |
| Package Description | H-PSOF8L, 8 PIN | |
| Manufacturer Package Code | 100CU | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 820 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 300 A | |
| Drain-source On Resistance-Max | 0.0014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 139 pF | |
| JEDEC-95 Code | MO-299A | |
| JESD-30 Code | R-PSSO-F2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 429 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 193 ns | |
| Turn-on Time-Max (ton) | 128 ns |
This table gives cross-reference parts and alternative options found for FDBL86361-F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDBL86361-F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDBL86361_F085 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor | FDBL86361-F085 vs FDBL86361_F085 |
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
The device requires a stable input voltage (VIN) and a proper bias voltage (VCC) to operate correctly. Ensure VIN is within the recommended range (4.5V to 18V) and VCC is set to 5V or 3.3V depending on the application.
The FDBL86361-F085 can handle a maximum current of 3A per channel, but this may vary depending on the application and thermal conditions. It's essential to ensure proper thermal management and follow the recommended PCB layout guidelines.
Check the input voltage, bias voltage, and output current to ensure they are within the recommended ranges. Verify the PCB layout and thermal management are correct. If issues persist, consult the onsemi support team or a qualified engineer for assistance.
Yes, the FDBL86361-F085 is sensitive to electromagnetic interference (EMI). Ensure proper PCB layout, use of shielding, and filtering to minimize EMI effects. Follow the recommended layout guidelines and consult the onsemi application notes for EMI/EMC considerations.