Datasheets
FDC6306P by:
onsemi

Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ, TSOT-23-6, 3000-REEL

Part Details for FDC6306P by onsemi

Results Overview of FDC6306P by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

FDC6306P Information

FDC6306P by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDC6306P

Part # Distributor Description Stock Price Buy
DISTI # 9844929
Farnell MOSFET, P-CH, 20V, 1.9A, SUPERSOT-6 COO: PH RoHS: Compliant Min Qty: 1 Lead time: 16 Weeks, 1 Days Container: Cut Tape 44169
  • 1 $0.9029
  • 10 $0.5607
  • 100 $0.3646
  • 500 $0.2659
  • 1,000 $0.2330
$0.2330 / $0.9029 Buy Now
DISTI # 9844929RL
Farnell MOSFET, P-CH, 20V, 1.9A, SUPERSOT-6 COO: PH RoHS: Compliant Min Qty: 100 Lead time: 16 Weeks, 1 Days Container: Reel 44169
  • 100 $0.3646
  • 500 $0.2659
  • 1,000 $0.2330
$0.2330 / $0.3646 Buy Now
DISTI # 2438425
Farnell MOSFET, P-CH, 20V, 1.9A, SUPERSOT-6 COO: PH RoHS: Compliant Min Qty: 3000 Lead time: 16 Weeks, 1 Days Container: Reel 0
  • 3,000 $0.2343
  • 9,000 $0.1922
$0.1922 / $0.2343 Buy Now
DISTI # FDC6306P
Avnet Americas - Tape and Reel (Alt: FDC6306P) COO: Korea (the Republic of) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel 15000
2 Factory Stock
  • 3,000 $0.1867
  • 6,000 $0.1830
  • 12,000 $0.1804
  • 24,000 $0.1779
  • 48,000 $0.1750
$0.1750 / $0.1867 Buy Now
Bristol Electronics   42000
RFQ
Bristol Electronics   Min Qty: 9 3565
  • 9 $0.5625
  • 37 $0.3656
  • 138 $0.2109
  • 476 $0.1800
  • 1,029 $0.1575
  • 2,446 $0.1462
$0.1462 / $0.5625 Buy Now
DISTI # FDC6306P
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6000 0
  • 6,000 $0.1800
$0.1800 Buy Now
DISTI # FDC6306P
Avnet Silica (Alt: FDC6306P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Silica - 0
Buy Now
Chip Stock DualP-ChannelPowerTrench®MOSFET,2.5VSpecified,-20V,-1.9A,170mΩ 48493
RFQ
DISTI # FDC6306P
EBV Elektronik (Alt: FDC6306P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
LCSC 20V 1.9A 170m4.5V 960mW 1.5V250uA SuperSOT-6 Single FETs MOSFETs RoHS 1477
  • 1 $0.5045
  • 10 $0.3869
  • 30 $0.3374
  • 100 $0.2740
  • 500 $0.2461
  • 1,000 $0.2291
$0.2291 / $0.5045 Buy Now
New Advantage Corporation Dual P-Channel 20 V 0.170 Ohm 2.5 V Specified PowerTrench Mosfet SSOT-6 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 6000
  • 3,000 $0.3233
  • 6,000 $0.2985
$0.2985 / $0.3233 Buy Now

Part Details for FDC6306P

FDC6306P CAD Models

FDC6306P Part Data Attributes

FDC6306P onsemi
Buy Now Datasheet
Compare Parts:
FDC6306P onsemi Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ, TSOT-23-6, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TSOT-23-6
Package Description SUPERSOT-6
Manufacturer Package Code 419BL
Reach Compliance Code Compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 0.17 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDC6306P

This table gives cross-reference parts and alternative options found for FDC6306P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC6306P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDC6306PD87Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6306P vs FDC6306PD87Z
FDC6306PL99Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6306P vs FDC6306PL99Z
Part Number Manufacturer Composite Price Description Compare
FDC6318P onsemi $0.4363 Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ, TSOT-23-6, 3000-REEL FDC6306P vs FDC6318P
FDC6306P Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6306P vs FDC6306P
FDC6306PS62Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6306P vs FDC6306PS62Z
FDC6312P Rochester Electronics LLC Check for Price 2300mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 FDC6306P vs FDC6312P
FDC6318P_NL Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6306P vs FDC6318P_NL
ZXM62P03E6TC Zetex / Diodes Inc Check for Price Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN FDC6306P vs ZXM62P03E6TC
FDC6506P Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6306P vs FDC6506P
FDC6308PD87Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6306P vs FDC6308PD87Z
FDC6318P Rochester Electronics LLC Check for Price 2500mA, 12V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 FDC6306P vs FDC6318P
FDC6318P Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6306P vs FDC6318P
equivalents icon

FDC6306P Related Parts

FDC6306P Frequently Asked Questions (FAQ)

  • A good PCB layout for the FDC6306P involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing it away from the device can help reduce EMI.

  • To ensure the FDC6306P operates within its SOA, monitor the device's junction temperature, input voltage, and output current. Make sure the device is not exposed to excessive voltage, current, or temperature, and that the thermal design is adequate to prevent overheating.

  • A low-ESR ceramic capacitor with a value of 10-22uF is recommended for the input of the FDC6306P. This helps to filter out noise and ripple, and ensures stable operation.

  • To troubleshoot issues with the FDC6306P, start by checking the input voltage, output voltage, and output current. Verify that the device is properly soldered and that the PCB layout is correct. Check for signs of overheating, such as excessive temperature or thermal shutdown. Consult the datasheet and application notes for guidance on troubleshooting specific issues.

  • Yes, the FDC6306P is suitable for high-reliability and automotive applications. It meets the requirements of AEC-Q100, a standard for automotive-grade ICs. However, ensure that the device is used within its specified operating conditions and that the system design meets the required safety and reliability standards.

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