Datasheets
FDD3670 by:

34A, 100V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

Part Details for FDD3670 by Rochester Electronics LLC

Overview of FDD3670 by Rochester Electronics LLC

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Part Details for FDD3670

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FDD3670 Part Data Attributes

FDD3670 Rochester Electronics LLC
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FDD3670 Rochester Electronics LLC 34A, 100V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-252
Package Description DPAK-3
Pin Count 3
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 360 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 34 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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