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Part Details for FDMC8878 by onsemi
Results Overview of FDMC8878 by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (2 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMC8878 Information
FDMC8878 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDMC8878
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 513 |
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RFQ | ||
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Bristol Electronics | Min Qty: 5 | 346 |
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$0.3600 / $1.1250 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 9.6A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Status: Active Min Qty: 1 | 800 |
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$0.4371 / $0.7050 | Buy Now |
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DISTI #
FDMC8878
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TME | Transistor: N-MOSFET, unipolar, 30V, 16.5A, 31W, WDFN8 Min Qty: 1 | 0 |
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$0.7300 / $1.1000 | RFQ |
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Component Electronics, Inc | SMT TAPE | 11 |
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$1.0000 / $1.5400 | Buy Now |
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Flip Electronics | Stock, ship today | 6408 |
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RFQ |
Part Details for FDMC8878
FDMC8878 CAD Models
FDMC8878 Part Data Attributes
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FDMC8878
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMC8878
onsemi
N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ, WDFN-8, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | WDFN-8 | |
| Manufacturer Package Code | 511DH | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 9.6 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N5 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 31 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDMC8878
This table gives cross-reference parts and alternative options found for FDMC8878. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDMC8878, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDMC8878-F127 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FDMC8878 vs FDMC8878-F127 |
| FDMC8878-F126 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FDMC8878 vs FDMC8878-F126 |
FDMC8878 Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
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Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
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The maximum allowable voltage on the enable pin (EN) is 6V. Exceeding this voltage may damage the device.
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Yes, but ensure that the device is properly bypassed and decoupled to minimize electromagnetic interference (EMI). Follow the recommended layout and decoupling guidelines.
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Use a TVS diode or a zener diode to clamp the voltage and protect the device from EOS. Also, ensure that the device is operated within the recommended voltage and current ratings.