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Part Details for FDN5618P by onsemi
Overview of FDN5618P by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for FDN5618P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
58K8844
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Newark | P Channel Mosfet, -60V, 1.2A Super Sot-3, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:1.25A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Onsemi FDN5618P Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 7085 |
|
$0.2290 / $0.4370 | Buy Now |
|
DISTI #
04X6266
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Newark | Mosfet, P, -60V, -1.25A, Sot-23, Reel, Transistor Polarity:P Channel, Continuous Drain Current Id:1.2A, Drain Source Voltage Vds:-60V, On Resistance Rds(On):0.17Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-1.6V, Power Rohs Compliant: Yes |Onsemi FDN5618P Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1940 / $0.2640 | Buy Now |
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DISTI #
67R2065
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Newark | Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:1.25A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V, Power Dissipation:500Mw Rohs Compliant: Yes |Onsemi FDN5618P Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1220 / $0.1870 | Buy Now |
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DISTI #
25M9466
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Newark | Mosfet Transistor, P Channel, -1.25 A, -60 V, 170 Mohm, -10 V, 20 V Rohs Compliant: Yes |Onsemi FDN5618P Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.4340 / $0.7700 | Buy Now |
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DISTI #
2832-FDN5618PTR-ND
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DigiKey | MOSFET P-CH 60V 1.25A SUPERSOT3 Min Qty: 1 Lead time: 12 Weeks Container: Tape & Reel (TR) MARKETPLACE PRODUCT |
176000 In Stock |
|
$0.3420 | Buy Now |
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DISTI #
FDN5618PCT-ND
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DigiKey | MOSFET P-CH 60V 1.25A SUPERSOT3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.1175 / $0.4200 | Buy Now |
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DISTI #
FDN5618P
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Avnet Americas | Trans MOSFET P-CH 60V 1.25A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN5618P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 24000 |
|
$0.1117 / $0.1333 | Buy Now |
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DISTI #
FDN5618P
|
Avnet Americas | Trans MOSFET P-CH 60V 1.25A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN5618P) RoHS: Compliant Min Qty: 6250 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 176000 Partner Stock |
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$0.0992 / $0.1184 | Buy Now |
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DISTI #
FDN5618P
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Avnet Americas | Trans MOSFET P-CH 60V 1.25A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN5618P) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.1099 / $0.1316 | Buy Now |
|
DISTI #
58K8844
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Avnet Americas | Trans MOSFET P-CH 60V 1.25A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 58K8844) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 4 Days Container: Ammo Pack | 7085 Partner Stock |
|
$0.2280 / $0.4370 | Buy Now |
Part Details for FDN5618P
FDN5618P CAD Models
FDN5618P Part Data Attributes
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|
FDN5618P
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDN5618P
onsemi
60V P-Channel PowerTrench® MOSFET -1.25A, 170mΩ, 3000-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | SUPERSOT-3 | |
| Manufacturer Package Code | 527AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 1.25 A | |
| Drain-source On Resistance-Max | 0.17 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDN5618P
This table gives cross-reference parts and alternative options found for FDN5618P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN5618P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDN5618P_NL | Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | FDN5618P vs FDN5618P_NL |
| FDN5618P | 1.25A, 60V, 0.17ohm, P-CHANNEL, Si, POWER, MOSFET, SUPERSOT-3 | Rochester Electronics LLC | FDN5618P vs FDN5618P |
| FDN5618P | Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | FDN5618P vs FDN5618P |