Part Details for FDN5630 by Fairchild Semiconductor Corporation
Results Overview of FDN5630 by Fairchild Semiconductor Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (2 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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FDN5630 Information
FDN5630 by Fairchild Semiconductor Corporation is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDN5630
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 9 | 1955 |
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$0.1200 / $0.6000 | Buy Now |
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Bristol Electronics | 288 |
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RFQ | ||
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ComSIT USA | Small Signal Field-Effect Transistor, 1.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 12000 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 60V 1.7A SSOT3 | 282549 |
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$0.1305 / $0.1964 | Buy Now |
US Tariff Estimator: FDN5630 by Fairchild Semiconductor Corporation
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for FDN5630
FDN5630 Part Data Attributes
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FDN5630
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDN5630
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 1.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SSOT | |
| Package Description | SUPERSOT-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | MOLDED PACKAGE, SUPERSOT, 3 LEAD | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDN5630
This table gives cross-reference parts and alternative options found for FDN5630. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN5630, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDN5630 | onsemi | $0.2228 | N-Channel PowerTrench® MOSFET 60V, 1.7A, 100mΩ, SOT-23-3, 3000-REEL | FDN5630 vs FDN5630 |
| FDN5630 | Rochester Electronics LLC | Check for Price | 1700mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 | FDN5630 vs FDN5630 |
FDN5630 Frequently Asked Questions (FAQ)
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The FDN5630 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
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To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the GND pin to a solid ground plane. Also, ensure that the input voltage (VIN) is within the recommended range of 4.5V to 5.5V.
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To minimize EMI and noise, use a multi-layer PCB with a solid ground plane, and keep the FDN5630 away from high-frequency signals. Use short, direct traces for power and ground connections, and avoid routing signals under the device.
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Yes, the FDN5630 can handle high currents up to 3A, but ensure that the PCB is designed to handle the increased current and thermal dissipation. Use a heat sink if necessary, and follow proper thermal management guidelines.
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To troubleshoot issues, check the input voltage, output current, and thermal conditions. Verify that the device is properly biased and that the PCB layout is correct. Use a thermal camera or thermometer to monitor temperature, and check for signs of overheating or thermal runaway.