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Transistors / Power Field-Effect Transistors / FDP22N50N
Datasheets
FDP22N50N by:

Power MOSFET, N-Channel, UniFETTM II, 500 V, 22 A, 220 mΩ, TO-220, 1000-TUBE

Part Details for FDP22N50N by onsemi

Overview of FDP22N50N by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FDP22N50N

Part # Distributor Description Stock Price Buy
DISTI # 07AH3942
Newark Mosfet, N-Ch, 500V, 22A, To-220, Transistor Polarity:N Channel, Continuous Drain Current Id:22A, Drain Source Voltage Vds:500V, On Resistance Rds(On):0.185Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Dissipationrohs Compliant: Yes |Onsemi FDP22N50N Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $3.9200
  • 10 $3.5400
  • 25 $3.3300
  • 50 $3.1100
  • 100 $2.9000
  • 250 $2.6800
  • 500 $2.4700
$2.4700 / $3.9200 Buy Now
DISTI # FDP22N50N-ND
DigiKey MOSFET N-CH 500V 22A TO220-3 Min Qty: 1 Lead time: 26 Weeks Container: Tube Temporarily Out of Stock
  • 1 $3.6800
  • 50 $2.9182
  • 100 $2.5014
  • 500 $2.2235
  • 1,000 $1.9038
  • 2,000 $1.7927
  • 5,000 $1.7199
$1.7199 / $3.6800 Buy Now
DISTI # FDP22N50N
Avnet Americas Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: FDP22N50N) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube 600
  • 50 $2.0638
  • 60 $2.0088
  • 110 $1.9538
  • 250 $1.8987
  • 500 $1.8437
$1.8437 / $2.0638 Buy Now
DISTI # 512-FDP22N50N
Mouser Electronics MOSFET UniFETII 500V 22A 688
  • 1 $3.6800
  • 10 $3.3600
  • 50 $2.9200
  • 100 $2.5100
  • 250 $2.4300
  • 500 $2.2300
  • 1,000 $1.9700
$1.9700 / $3.6800 Buy Now
Future Electronics FDP22N50N Series 500 V 22 A 220 mOhm N-Channel UniFET-II™ Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 6 Weeks Container: Tube 0
Tube
  • 1,000 $1.8100
  • 2,000 $1.7600
$1.7600 / $1.8100 Buy Now
Future Electronics FDP22N50N Series 500 V 22 A 220 mOhm N-Channel UniFET-II™ Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 26 Weeks Container: Tube 0
Tube
  • 50 $1.8100
  • 2,000 $1.7600
$1.7600 / $1.8100 Buy Now
DISTI # FDP22N50N
TME Transistor: N-MOSFET, unipolar, 500V, 13.2A, 312.5W, TO220AB Min Qty: 1 46
  • 1 $3.4700
  • 10 $2.9900
  • 50 $2.6500
  • 100 $2.5000
  • 250 $2.3000
$2.3000 / $3.4700 Buy Now
Ameya Holding Limited   Min Qty: 50 10
  • 50 $3.4469
  • 100 $3.3436
  • 500 $3.0092
$3.0092 / $3.4469 Buy Now
DISTI # FDP22N50N
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1000 0
  • 1,000 $1.7200
$1.7200 Buy Now
DISTI # FDP22N50N
Avnet Asia Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220 Rail (Alt: FDP22N50N) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days 0
  • 1,000 $1.9656
  • 2,000 $1.8345
  • 3,000 $1.7869
  • 5,000 $1.7416
  • 10,000 $1.6986
  • 25,000 $1.6577
  • 50,000 $1.6187
$1.6187 / $1.9656 Buy Now
DISTI # FDP22N50N
Avnet Silica Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220 Rail (Alt: FDP22N50N) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 27 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDP22N50N
EBV Elektronik Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220 Rail (Alt: FDP22N50N) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 28 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation TO220-3/N-Channel UniFET II MOSFET 500V, 22A, 220mOhm RoHS: Compliant Min Qty: 1 Package Multiple: 50 750
  • 100 $2.8900
  • 750 $2.6700
$2.6700 / $2.8900 Buy Now

Part Details for FDP22N50N

FDP22N50N CAD Models

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FDP22N50N Part Data Attributes

Parametric Data
FDP22N50N onsemi
Buy Now Datasheet
Compare Parts:
FDP22N50N onsemi Power MOSFET, N-Channel, UniFETTM II, 500 V, 22 A, 220 mΩ, TO-220, 1000-TUBE
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Manufacturer Package Code 340AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 1000 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.22 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 312.5 W
Pulsed Drain Current-Max (IDM) 88 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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