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Transistors Power Field-Effect Transistors FDP4D5N10C

FDP4D5N10C
onsemi
Description: N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ, 800-TUBE

Overview of FDP4D5N10C by onsemi

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 15 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for FDP4D5N10C by onsemi

Part # Manufacturer Description Stock Price Buy
DISTI # 65AC4707
Newark Mosfet, N-Ch, 100V, 128A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:128A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.2V Rohs Compliant: Yes |Onsemi FDP4D5N10C RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 500 $2.9100
$2.9100 Buy Now
DISTI # FDP4D5N10C-ND
DigiKey MOSFET N-CH 100V 128A TO220-3 Min Qty: 1 Lead time: 17 Weeks Container: Tube 563
In Stock
  • 1 $6.5200
  • 50 $3.4836
  • 100 $3.1897
  • 500 $2.7344
$2.7344 / $6.5200 Buy Now
DISTI # FDP4D5N10C
Avnet Americas Shielded Gate PowerTrench MOSFET N-Channel 100V 128A 4.5m Ohm 3-Pin TO-220 Tube - Rail/Tube (Alt: FDP4D5N10C) RoHS: Compliant Min Qty: 115 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 3452 Partner Stock
  • 115 $3.2412
  • 120 $3.1536
  • 240 $3.0660
  • 580 $2.9784
  • 1,200 $2.8908
  • 5,800 $2.8032
  • 12,000 $2.7156
$2.7156 / $3.2412 Buy Now
DISTI # FDP4D5N10C
Avnet Americas Shielded Gate PowerTrench MOSFET N-Channel 100V 128A 4.5m Ohm 3-Pin TO-220 Tube - Rail/Tube (Alt: FDP4D5N10C) RoHS: Compliant Min Qty: 229 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube 1514 Partner Stock
RFQ
DISTI # FDP4D5N10C
Avnet Americas Shielded Gate PowerTrench MOSFET N-Channel 100V 128A 4.5m Ohm 3-Pin TO-220 Tube - Rail/Tube (Alt: FDP4D5N10C) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Tube 0
  • 800 $2.3789
$2.3789 Buy Now
DISTI # 863-FDP4D5N10C
Mouser Electronics MOSFETs FET 100V 128A 4.5 mOhm RoHS: Compliant 48
  • 1 $4.1600
  • 10 $3.2200
  • 50 $3.1600
  • 100 $2.7400
  • 800 $2.7300
$2.7300 / $4.1600 Buy Now
Onlinecomponents.com Shielded Gate PowerTrench MOSFET N-Channel 100V 128A 4.5m Ohm 3-Pin TO-220 Tube RoHS: Compliant 0
  • 200 $5.6900
  • 400 $3.5000
  • 600 $2.7700
  • 800 $2.7200
$2.7200 / $5.6900 Buy Now
DISTI # 59283373
Verical Trans MOSFET N-CH 100V 128A 3-Pin(3+Tab) TO-220 Tube Min Qty: 3 Package Multiple: 1 Date Code: 1843 Americas - 728
  • 3 $2.5600
$2.5600 Buy Now
Rochester Electronics FDP4D5N10C - N-Channel Shielded Gate PowerTrench MOSFET, 100V, 128A RoHS: Not Compliant Status: Active Min Qty: 1 3452
  • 1 $3.1900
  • 25 $3.1300
  • 100 $3.0000
  • 500 $2.8700
  • 1,000 $2.7100
$2.7100 / $3.1900 Buy Now
DISTI # FDP4D5N10C
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 0
  • 800 $2.7300
$2.7300 Buy Now
DISTI # FDP4D5N10C
Avnet Silica Shielded Gate PowerTrench MOSFET N-Channel 100V 128A 4.5m Ohm 3-Pin TO-220 Tube (Alt: FDP4D5N10C) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 18 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S541901948988
Chip1Stop MOSFET RoHS: Compliant 728
  • 1 $3.5000
$3.5000 Buy Now
DISTI # C1S541901716547
Chip1Stop MOSFET RoHS: Compliant 48
  • 1 $18.7000
$18.7000 Buy Now
Flip Electronics Stock, ship today 1514
RFQ
Wuhan P&S 100V, 128A, 4.5m��, N-Channel PowerTrench MOSFET, Shielded Gate Min Qty: 1 48
  • 1 $7.6300
  • 100 $4.8700
  • 500 $4.0200
  • 1,000 $3.7000
$3.7000 / $7.6300 Buy Now

CAD Models for FDP4D5N10C by onsemi
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Part Data Attributes for FDP4D5N10C by onsemi
Parametric Data

FDP4D5N10C
onsemi
Buy Now
-
-
Pbfree Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
ONSEMI
Manufacturer Package Code
221A
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Factory Lead Time
2 Days
Samacsys Manufacturer
onsemi
Avalanche Energy Rating (Eas)
486 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
91 A
Drain-source On Resistance-Max
0.0045 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
35 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
2.4 W
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
512 A
Surface Mount
NO
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
90 ns
Turn-on Time-Max (ton)
126 ns
Want to compare parts?
  1. FDP4D5N10C
    onsemi
    N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ, 800-TUBE
    VS

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