Part Details for FDS3572 by onsemi
Results Overview of FDS3572 by onsemi
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (3 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Automotive
FDS3572 Information
FDS3572 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDS3572
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2453413
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Farnell | MOSFET, N-CH, 80V, 8.9A, SOIC-8 COO: China RoHS: Compliant Min Qty: 1 Lead time: 20 Weeks, 1 Days Container: Cut Tape | 1958 |
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$0.8491 / $1.9995 | Buy Now |
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DISTI #
2453413RL
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Farnell | MOSFET, N-CH, 80V, 8.9A, SOIC-8 COO: China RoHS: Compliant Min Qty: 100 Lead time: 20 Weeks, 1 Days Container: Tape & Reel | 1958 |
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$0.8491 / $1.1024 | Buy Now |
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DISTI #
FDS3572
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Avnet Americas | - Tape and Reel (Alt: FDS3572) COO: United States of America (the) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Tape & Reel | 12500 |
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$0.6705 / $0.7152 | Buy Now |
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DISTI #
FDS3572
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TME | Transistor: N-MOSFET, unipolar, 80V, 5.6A, 2.5W, SO8 Min Qty: 1 | 0 |
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$0.7600 / $1.7600 | RFQ |
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DISTI #
FDS3572
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ | |
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DISTI #
FDS3572
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Avnet Silica | (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FDS3572
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EBV Elektronik | (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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New Advantage Corporation | N-Channel 80 V 16 mOhm 2.5 W Surface Mount PowerTrench MosFet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 17500 |
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$1.2200 / $1.3200 | Buy Now |
Part Details for FDS3572
FDS3572 CAD Models
FDS3572 Part Data Attributes
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FDS3572
onsemi
Buy Now
Datasheet
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Compare Parts:
FDS3572
onsemi
N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ, SOIC-8, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SOIC-8 | |
| Package Description | So-8 | |
| Manufacturer Package Code | 751EB | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Avalanche Energy Rating (Eas) | 515 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 8.9 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for FDS3572
This table gives cross-reference parts and alternative options found for FDS3572. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS3572, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDS3572_NL | Rochester Electronics LLC | Check for Price | 8.9A, 80V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SO-8 | FDS3572 vs FDS3572_NL |
| FDS3572 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8.9A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | FDS3572 vs FDS3572 |
| FDS3572 | Rochester Electronics LLC | Check for Price | 8.9A, 80V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 | FDS3572 vs FDS3572 |
FDS3572 Frequently Asked Questions (FAQ)
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The FDS3572 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
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The FDS3572 requires a bias voltage of 12V to 15V on the gate pin (G) and a source voltage of 0V to 5V on the source pin (S) for optimal performance.
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The FDS3572 has a maximum current rating of 3.5A, making it suitable for high-current applications.
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To protect the FDS3572 from ESD, use proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags, and follow the recommended assembly and soldering procedures.
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Yes, the FDS3572 is suitable for high-frequency applications up to 100 kHz, making it suitable for switching power supplies, motor control, and other high-frequency applications.