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Transistors / Power Field-Effect Transistors / FDS3890
Datasheets
FDS3890 by:

80V N-Channel Dual PowerTrench® MOSFET 4.7A, 44mΩ, 2500-REEL

Part Details for FDS3890 by onsemi

Overview of FDS3890 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FDS3890

Part # Distributor Description Stock Price Buy
DISTI # 87X8731
Newark Dual Mosfet, Dual N Channel, 4.7 A, 80 V, 0.034 Ohm, 10 V, 2.3 V Rohs Compliant: Yes |Onsemi FDS3890 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1571
  • 1 $1.8400
  • 10 $1.5300
  • 100 $1.2500
  • 500 $1.0500
  • 1,000 $0.8990
  • 2,500 $0.8810
$0.8810 / $1.8400 Buy Now
DISTI # FDS3890CT-ND
DigiKey MOSFET 2N-CH 80V 4.7A 8SOIC Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 9713
In Stock
  • 1 $1.7700
  • 10 $1.4670
  • 100 $1.1675
  • 500 $0.9879
  • 1,000 $0.8382
  • 2,500 $0.7963
  • 5,000 $0.7664
  • 12,500 $0.7410
$0.7410 / $1.7700 Buy Now
DISTI # FDS3890
Avnet Americas Transistor MOSFET Array Dual N-CH 80V 4.7A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS3890) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 2500
  • 2,500 $0.8773
  • 5,000 $0.8536
  • 10,000 $0.8299
  • 15,000 $0.8062
  • 20,000 $0.7825
  • 25,000 $0.7588
  • 250,000 $0.7351
$0.7351 / $0.8773 Buy Now
DISTI # 512-FDS3890
Mouser Electronics MOSFET SO-8 RoHS: Compliant 21906
  • 1 $1.7700
  • 10 $1.4700
  • 100 $1.2000
  • 250 $1.1600
  • 500 $1.0100
  • 1,000 $0.8640
  • 2,500 $0.8470
$0.8470 / $1.7700 Buy Now
Future Electronics N-Channel 80 V 44 mOhm Surface Mount Dual PowerTrench Mosfet SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.7800
  • 5,000 $0.7500
$0.7500 / $0.7800 Buy Now
Future Electronics N-Channel 80 V 44 mOhm Surface Mount Dual PowerTrench Mosfet SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.7800
  • 5,000 $0.7500
$0.7500 / $0.7800 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 4.7A I(D), 80V, 0.044OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 2000
  • 1 $4.3500
  • 374 $2.3925
  • 837 $2.1750
$2.1750 / $4.3500 Buy Now
Rochester Electronics FDS3890 - Dual N-Channel, MOSFET - Power RoHS: Compliant Status: Active Min Qty: 1 1958
  • 1 $0.8645
  • 25 $0.8472
  • 100 $0.8126
  • 500 $0.7781
  • 1,000 $0.7348
$0.7348 / $0.8645 Buy Now
DISTI # FDS3890
Avnet Americas Transistor MOSFET Array Dual N-CH 80V 4.7A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS3890) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 2500
  • 2,500 $0.8773
  • 5,000 $0.8536
  • 10,000 $0.8299
  • 15,000 $0.8062
  • 20,000 $0.7825
  • 25,000 $0.7588
  • 250,000 $0.7351
$0.7351 / $0.8773 Buy Now
DISTI # FDS3890
Avnet Americas Transistor MOSFET Array Dual N-CH 80V 4.7A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS3890) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.8773
  • 5,000 $0.8536
  • 10,000 $0.8299
  • 15,000 $0.8062
  • 20,000 $0.7825
  • 25,000 $0.7588
  • 250,000 $0.7351
$0.7351 / $0.8773 Buy Now
DISTI # FDS3890
TME Transistor: N-MOSFET x2, unipolar, 80V, 4.7A, Idm: 20A, 2W, SO8 Min Qty: 1 0
  • 1 $1.4300
  • 5 $1.2900
  • 25 $1.1400
  • 100 $1.0200
  • 500 $0.9200
$0.9200 / $1.4300 RFQ
Ameya Holding Limited   Min Qty: 5 4990
  • 5 $2.1718
  • 625 $2.1062
  • 1,250 $2.0430
$2.0430 / $2.1718 Buy Now
DISTI # FDS3890
Avnet Americas Transistor MOSFET Array Dual N-CH 80V 4.7A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS3890) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.8773
  • 5,000 $0.8536
  • 10,000 $0.8299
  • 15,000 $0.8062
  • 20,000 $0.7825
  • 25,000 $0.7588
  • 250,000 $0.7351
$0.7351 / $0.8773 Buy Now
DISTI # FDS3890
Avnet Asia Transistor MOSFET Array Dual N-CH 80V 4.7A 8-Pin SOIC T/R (Alt: FDS3890) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days 0
  • 2,500 $0.7800
  • 5,000 $0.7699
  • 7,500 $0.7600
  • 12,500 $0.7504
  • 25,000 $0.7319
  • 62,500 $0.7142
  • 125,000 $0.6974
$0.6974 / $0.7800 Buy Now
DISTI # FDS3890
Avnet Silica Transistor MOSFET Array Dual N-CH 80V 4.7A 8-Pin SOIC T/R (Alt: FDS3890) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 1 Weeks, 6 Days Silica - 0
Buy Now
DISTI # FDS3890
EBV Elektronik Transistor MOSFET Array Dual N-CH 80V 4.7A 8-Pin SOIC T/R (Alt: FDS3890) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 2 Weeks, 0 Days EBV - 10000
Buy Now
DISTI # 2101472
element14 Asia-Pacific Transistor Polarity:Dual N Channel RoHS: Compliant Min Qty: 1 Container: Each 1571
  • 1 $1.8592
  • 10 $1.5432
  • 100 $1.2199
  • 500 $1.0582
  • 1,000 $0.8892
  • 5,000 $0.8745
$0.8745 / $1.8592 Buy Now
DISTI # 2101472
Farnell MOSFET, NN CH, 80V, 8SOIC RoHS: Compliant Min Qty: 1 Lead time: 21 Weeks, 1 Days Container: Each 1571
  • 1 $2.0064
  • 10 $1.5204
  • 100 $1.1578
  • 500 $1.0070
  • 1,000 $0.8449
  • 5,000 $0.8275
$0.8275 / $2.0064 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 7500
  • 2,500 $1.2700
  • 7,500 $1.1800
$1.1800 / $1.2700 Buy Now

Part Details for FDS3890

FDS3890 CAD Models

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FDS3890 Part Data Attributes

Parametric Data
FDS3890 onsemi
Buy Now Datasheet
Compare Parts:
FDS3890 onsemi 80V N-Channel Dual PowerTrench® MOSFET 4.7A, 44mΩ, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description SO-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 50 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 175 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 4.7 A
Drain-source On Resistance-Max 0.044 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS3890

This table gives cross-reference parts and alternative options found for FDS3890. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS3890, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS3890_NL Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation FDS3890 vs FDS3890_NL
Part Number Description Manufacturer Compare
FDS3890F011 Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS3890 vs FDS3890F011
FDS3890L86Z Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS3890 vs FDS3890L86Z
FDS3890S62Z Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS3890 vs FDS3890S62Z
FDS3890_NL Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation FDS3890 vs FDS3890_NL
FDS3890L99Z Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS3890 vs FDS3890L99Z

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