Datasheets
FDS4953 by:

Dual30V P-Channel PowerTrench® MOSFET, 8LD, JEDEC MS-012, .150"NARROW BODY, 2500/TAPE REEL

Part Details for FDS4953 by Fairchild Semiconductor Corporation

Overview of FDS4953 by Fairchild Semiconductor Corporation

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Price & Stock for FDS4953

Part # Distributor Description Stock Price Buy
Bristol Electronics   1728
RFQ
Quest Components 5 A, 30 V, 0.053 OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET 2440
  • 1 $0.7650
  • 110 $0.3570
  • 561 $0.3188
$0.3188 / $0.7650 Buy Now
Quest Components 5 A, 30 V, 0.053 OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET 1382
  • 1 $1.2750
  • 79 $0.6375
  • 315 $0.5100
$0.5100 / $1.2750 Buy Now
ComSIT USA DUAL 30V P-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 5A I(D), 30V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 525
RFQ
DISTI # 1467982RL
element14 Asia-Pacific MOSFET, DUAL, P, SMD, 8-SOIC RoHS: Compliant Min Qty: 1 Container: Reel 0
  • 1 $1.1437
$1.1437 Buy Now

Part Details for FDS4953

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FDS4953 Part Data Attributes

FDS4953 Fairchild Semiconductor Corporation
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FDS4953 Fairchild Semiconductor Corporation Dual30V P-Channel PowerTrench® MOSFET, 8LD, JEDEC MS-012, .150"NARROW BODY, 2500/TAPE REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description SO-8
Pin Count 8
Manufacturer Package Code 8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS4953

This table gives cross-reference parts and alternative options found for FDS4953. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS4953, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS4953_NL Power Field-Effect Transistor, 5A I(D), 30V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS4953 vs FDS4953_NL
FDS4953 5A, 30V, 0.055ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC FDS4953 vs FDS4953
Part Number Description Manufacturer Compare
PHN210T TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Power NXP Semiconductors FDS4953 vs PHN210T
FDS8947A Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS4953 vs FDS8947A
HUF76105DK8 Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor FDS4953 vs HUF76105DK8
F5H3ND Power Field-Effect Transistor, 5A I(D), 30V, 0.07ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Shindengen Electronic Manufacturing Co Ltd FDS4953 vs F5H3ND
NDS9956AD84Z Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS4953 vs NDS9956AD84Z
IRF7706PBF Power Field-Effect Transistor, 7A I(D), 30V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8 International Rectifier FDS4953 vs IRF7706PBF
BSO305N Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Infineon Technologies AG FDS4953 vs BSO305N
NDS9953A Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS4953 vs NDS9953A
HAT1036R 12A, 30V, 0.034ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 Renesas Electronics Corporation FDS4953 vs HAT1036R
NDS9956A_NL Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOIC-8 Fairchild Semiconductor Corporation FDS4953 vs NDS9956A_NL

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