Datasheets
FDS6812A_NL by: Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.7A I(D), 20V, 0.22ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Part Details for FDS6812A_NL by Fairchild Semiconductor Corporation

Overview of FDS6812A_NL by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Renewable Energy Automotive

Part Details for FDS6812A_NL

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FDS6812A_NL Part Data Attributes

FDS6812A_NL Fairchild Semiconductor Corporation
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FDS6812A_NL Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6.7A I(D), 20V, 0.22ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 6.7 A
Drain-source On Resistance-Max 0.22 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 35 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS6812A_NL

This table gives cross-reference parts and alternative options found for FDS6812A_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6812A_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL Fairchild Semiconductor Corporation FDS6812A_NL vs FDS6812A
FDS6812A 6.7A, 20V, 0.22ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC FDS6812A_NL vs FDS6812A
Part Number Description Manufacturer Compare
RF1K4909096 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor FDS6812A_NL vs RF1K4909096
HAT1055R 5A, 60V, 0.13ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation FDS6812A_NL vs HAT1055R
NDS9956 3.5A, 20V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Texas Instruments FDS6812A_NL vs NDS9956
RF1K49090 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Fairchild Semiconductor Corporation FDS6812A_NL vs RF1K49090
FDS9926A_NL Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6812A_NL vs FDS9926A_NL
FDS6961AZ Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6812A_NL vs FDS6961AZ
PHN210T Power Field-Effect Transistor Nexperia FDS6812A_NL vs PHN210T
IRF7101 Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier FDS6812A_NL vs IRF7101
BSO211P Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Infineon Technologies AG FDS6812A_NL vs BSO211P
FW133 Power Field-Effect Transistor, 7A I(D), 30V, 0.032ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd FDS6812A_NL vs FW133

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