Datasheets
FDS6982F011 by: Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8.6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

Part Details for FDS6982F011 by Fairchild Semiconductor Corporation

Overview of FDS6982F011 by Fairchild Semiconductor Corporation

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Part Details for FDS6982F011

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FDS6982F011 Part Data Attributes

FDS6982F011 Fairchild Semiconductor Corporation
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FDS6982F011 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 8.6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8.6 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS6982F011

This table gives cross-reference parts and alternative options found for FDS6982F011. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6982F011, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
UPA2755AGR-E1-AT Switching N-Channel Power MOSFET, SOP, /Embossed Tape Renesas Electronics Corporation FDS6982F011 vs UPA2755AGR-E1-AT
SH8K15GZETB Power Field-Effect Transistor, 9A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 ROHM Semiconductor FDS6982F011 vs SH8K15GZETB
SH8K15TB Power Field-Effect Transistor, 9A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 ROHM Semiconductor FDS6982F011 vs SH8K15TB

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