| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
86K0209
|
Newark | N Channel Mosfet, 30V, 7.9Ma, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:7.9A, Continuous Drain Current Id P Channel:7.9A Rohs Compliant: Yes |Onsemi FDS6986AS RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | ||
|
DISTI #
15R3434
|
Newark | N Channel Mosfet, 30V, 7.9Ma, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:7.9A, Continuous Drain Current Id P Channel:7.9A Rohs Compliant: Yes |Onsemi FDS6986AS RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | ||
|
DISTI #
31Y1405
|
Newark | Mosfet Transistor, Dual N Channel, 7.9 A, 30 V, 0.017 Ohm, 10 V, 1.7 V Rohs Compliant: Yes |Onsemi FDS6986AS RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.7510 / $1.0700 | Buy Now | |
|
DISTI #
FDS6986ASCT-ND
|
DigiKey | MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC Min Qty: 1 Lead time: 33 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
10074 In Stock |
|
$0.3569 / $1.5200 | Buy Now | |
|
DISTI #
FDS6986AS
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 6.5A/7.9A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6986AS) RoHS: Compliant Min Qty: 876 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 3700 Partner Stock |
|
$0.3540 / $0.4225 | Buy Now | |
|
DISTI #
77792705
|
Verical | Trans MOSFET N-CH 30V 6.5A/7.9A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Date Code: 2329 | Americas - 57500 |
|
$0.3459 / $0.3923 | Buy Now | |
| Quest Components | MOSFET Power Module Transistor, Independent | 4000 |
|
$3.1869 / $6.3738 | Buy Now | ||
| Ameya Holding Limited | N-Channel 30 V 29 mOhm Dual PowerTrench SyncFET - SOIC-8 | 2500 |
|
RFQ | |||
|
DISTI #
C1S226600249908
|
Chip1Stop | Trans MOSFET N-CH 30V 6.5A/7.9A 8-Pin SOIC N T/R RoHS: Compliant | 57500 |
|
$0.4000 | Buy Now |
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Part Life Cycle Code
|
End Of Life
|
|
Ihs Manufacturer
|
ONSEMI
|
|
Package Description
|
SO-8
|
|
Manufacturer Package Code
|
751EB
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
4 Weeks
|
|
Samacsys Manufacturer
|
onsemi
|
|
Configuration
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
30 V
|
|
Drain Current-Max (ID)
|
6.5 A
|
|
Drain-source On Resistance-Max
|
0.029 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
R-PDSO-G8
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
2
|
|
Number of Terminals
|
8
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
2 W
|
|
Pulsed Drain Current-Max (IDM)
|
20 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
