Part Details for FDS7088N3 by Fairchild Semiconductor Corporation
Overview of FDS7088N3 by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDS7088N3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | 21 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET | 18 |
|
$2.5088 / $5.0175 | Buy Now |
|
|
Rochester Electronics | FDS7088 - 21A, 30V, 0.004ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 4530 |
|
$2.2300 / $2.6300 | Buy Now |
Part Details for FDS7088N3
FDS7088N3 CAD Models
FDS7088N3 Part Data Attributes
|
|
FDS7088N3
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
FDS7088N3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 21A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOT | |
| Package Description | FLMP, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS7088N3
This table gives cross-reference parts and alternative options found for FDS7088N3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS7088N3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HAT2099H-EL-E | Nch Single Power Mosfet 30V 50A 3.7Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | FDS7088N3 vs HAT2099H-EL-E |
| BSC057N03LSGXT | Power Field-Effect Transistor, 17A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | FDS7088N3 vs BSC057N03LSGXT |
| HAT2166H-EL-E | Nch Single Power Mosfet 30V 45A 3.8Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | FDS7088N3 vs HAT2166H-EL-E |
| FDS7066N7 | Power Field-Effect Transistor, 23A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | FDS7088N3 vs FDS7066N7 |
| FDMS7670 | N-Channel PowerTrench® MOSFET 30V, 3.8mΩ, 3000-REEL | onsemi | FDS7088N3 vs FDMS7670 |
| BSC029N025SG | 24A, 25V, 0.0045ohm, N-CHANNEL, Si, POWER, MOSFET, GREEN, PLASTIC, TDSON-8 | Rochester Electronics LLC | FDS7088N3 vs BSC029N025SG |
| BSC0909NS | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | FDS7088N3 vs BSC0909NS |
| STL60NH3LL | 16A, 30V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8 | STMicroelectronics | FDS7088N3 vs STL60NH3LL |
| BSC052N03SG | Power Field-Effect Transistor, 18A I(D), 30V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | FDS7088N3 vs BSC052N03SG |
| HAT2099H | Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK-5 | Hitachi Ltd | FDS7088N3 vs HAT2099H |