Datasheets
FDS8958A by:

Dual N & P-Channel PowerTrench® MOSFET 30V, 2500-REEL

Part Details for FDS8958A by onsemi

Overview of FDS8958A by onsemi

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Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDS8958A

Part # Distributor Description Stock Price Buy
DISTI # FDS8958ACT-ND
DigiKey MOSFET N/P-CH 30V 7A/5A 8SOIC Min Qty: 1 Lead time: 33 Weeks Container: Tape & Reel (TR), Cut Tape (CT), Digi-Reel® 2500
In Stock
  • 2,500 $0.3211
  • 5,000 $0.3042
  • 12,500 $0.2817
  • 25,000 $0.2789
$0.2789 / $0.3211 Buy Now
DISTI # FDS8958A
Avnet Americas Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS8958A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.2677
  • 5,000 $0.2606
  • 10,000 $0.2535
  • 15,000 $0.2463
  • 20,000 $0.2392
$0.2392 / $0.2677 Buy Now
DISTI # 512-FDS8958A
Mouser Electronics MOSFET SO8 COMP N-P-CH T/R RoHS: Compliant 18912
  • 1 $0.8300
  • 10 $0.7430
  • 100 $0.5060
  • 500 $0.4230
  • 1,000 $0.3600
  • 2,500 $0.3280
  • 5,000 $0.3190
$0.3190 / $0.8300 Buy Now
Rochester Electronics Power Field-Effect Transistor, 7A, 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 361990
  • 1 $0.3254
  • 25 $0.3189
  • 100 $0.3059
  • 500 $0.2929
  • 1,000 $0.2766
$0.2766 / $0.3254 Buy Now
DISTI # FDS8958A
Avnet Americas Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS8958A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.2677
  • 5,000 $0.2606
  • 10,000 $0.2535
  • 15,000 $0.2463
  • 20,000 $0.2392
$0.2392 / $0.2677 Buy Now
DISTI # FDS8958A
TME Transistor: N/P-MOSFET, unipolar, complementary pair, 30/-30V Min Qty: 1 1515
  • 1 $0.7520
  • 5 $0.5160
  • 25 $0.4510
  • 100 $0.4080
  • 500 $0.3870
$0.3870 / $0.7520 Buy Now
Ameya Holding Limited   Min Qty: 630 2210
  • 630 $0.8190
  • 1,250 $0.7942
$0.7942 / $0.8190 Buy Now
DISTI # FDS8958A
Avnet Americas Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS8958A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.2677
  • 5,000 $0.2606
  • 10,000 $0.2535
  • 15,000 $0.2463
  • 20,000 $0.2392
$0.2392 / $0.2677 Buy Now
DISTI # FDS8958A
Avnet Asia Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R (Alt: FDS8958A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 33 Weeks, 0 Days 0
RFQ
DISTI # FDS8958A
Avnet Silica Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R (Alt: FDS8958A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 4 Weeks, 6 Days Silica - 0
Buy Now
DISTI # FDS8958A
EBV Elektronik Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R (Alt: FDS8958A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 5 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDS8958A

FDS8958A CAD Models

FDS8958A Part Data Attributes

FDS8958A onsemi
Buy Now Datasheet
Compare Parts:
FDS8958A onsemi Dual N & P-Channel PowerTrench® MOSFET 30V, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description SOP-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 45 Weeks
Date Of Intro 2017-09-22
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 54 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM) 20 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS8958A

This table gives cross-reference parts and alternative options found for FDS8958A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8958A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS8958A_NL Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8, 8 PIN Fairchild Semiconductor Corporation FDS8958A vs FDS8958A_NL
FDS8958A Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8, 8 PIN Fairchild Semiconductor Corporation FDS8958A vs FDS8958A
Part Number Description Manufacturer Compare
IRF7389TRPBF Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier FDS8958A vs IRF7389TRPBF
IRF7389TR Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Infineon Technologies AG FDS8958A vs IRF7389TR
IRF7389TRPBF Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG FDS8958A vs IRF7389TRPBF
NDS8958 Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS8958A vs NDS8958
IRF7319PBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier FDS8958A vs IRF7319PBF
FDS8958A Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8, 8 PIN Fairchild Semiconductor Corporation FDS8958A vs FDS8958A
IRF7319 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier FDS8958A vs IRF7319
IRF7389TR Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA International Rectifier FDS8958A vs IRF7389TR
IRF7319PBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG FDS8958A vs IRF7319PBF
IRF7319 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG FDS8958A vs IRF7319

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