Part Details for FDS8958A_NF073 by Fairchild Semiconductor Corporation
Overview of FDS8958A_NF073 by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FDS8958A_NF073
FDS8958A_NF073 CAD Models
FDS8958A_NF073 Part Data Attributes
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FDS8958A_NF073
Fairchild Semiconductor Corporation
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Datasheet
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FDS8958A_NF073
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8, 8 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 54 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDS8958A_NF073
This table gives cross-reference parts and alternative options found for FDS8958A_NF073. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8958A_NF073, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SP8M10TB | Power Field-Effect Transistor, 7A I(D), 30V, 0.037ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP8, 8 PIN | ROHM Semiconductor | FDS8958A_NF073 vs SP8M10TB |
AF8958CSLA | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 | Integrated Circuit Technology Corp | FDS8958A_NF073 vs AF8958CSLA |
AF8958CNL | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, DIP-8 | Integrated Circuit Technology Corp | FDS8958A_NF073 vs AF8958CNL |
AF8958CNA | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, DIP-8 | Integrated Circuit Technology Corp | FDS8958A_NF073 vs AF8958CNA |
TSM4539DCSRLG | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Taiwan Semiconductor | FDS8958A_NF073 vs TSM4539DCSRLG |
AP4501GD | TRANSISTOR 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, PLASTIC, DIP-8, FET General Purpose Power | Advanced Power Electronics Corp | FDS8958A_NF073 vs AP4501GD |
AP4503GM-HF | TRANSISTOR POWER, FET, FET General Purpose Power | Advanced Power Electronics Corp | FDS8958A_NF073 vs AP4503GM-HF |
SP8M10 | Power Field-Effect Transistor, 7A I(D), 30V, 0.035ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | ROHM Semiconductor | FDS8958A_NF073 vs SP8M10 |
SP8M10FRATB | Power Field-Effect Transistor, 7A I(D), 30V, 0.037ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | ROHM Semiconductor | FDS8958A_NF073 vs SP8M10FRATB |
AP4503AGM | TRANSISTOR 6.9 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power | Advanced Power Electronics Corp | FDS8958A_NF073 vs AP4503AGM |