-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
641-FF300R12KS4
|
Mouser Electronics | IGBT Modules ELECTRONIC COMPONENT RoHS: Compliant | 25 |
|
$185.9900 / $206.3400 | Buy Now |
DISTI #
73928838
|
RS | Transistor, 62mm, C-series module, IGBT2, 1200V, 300A, high-frequency switching | Infineon FF300R12KS4 RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 0 |
|
$199.0900 | RFQ |
DISTI #
FF300R12KS4
|
TME | Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 300A Min Qty: 1 | 0 |
|
$191.2200 / $215.7900 | RFQ |
|
ComSIT USA | Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | Europe - 60 |
|
RFQ | |
DISTI #
IGBT1541
|
Rutronik | Dual-IGBT 1200V 300A 62mm RoHS: Compliant Min Qty: 10 Package Multiple: 10 Container: Box |
Stock DE - 620 Stock HK - 0 Stock US - 0 Stock SG - 0 |
|
$186.6400 / $218.5900 | Buy Now |
|
Chips Pulse Industry Limited | Modules RoHS Purchase Online, Ship Immediately | 3 |
|
$83.2567 / $87.0314 | Buy Now |
|
LCSC | - IGBTs ROHS | 3 |
|
$92.5074 / $96.7016 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
FF300R12KS4
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
FF300R12KS4
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Pin Count | 7 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | FAST | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 370 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1950 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 590 ns | |
Turn-on Time-Nom (ton) | 180 ns | |
VCEsat-Max | 3.75 V |