Datasheets
FF400R06KE3HOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 500A I(C), 600V V(BR)CES, N-Channel, MODULE-7

Part Details for FF400R06KE3HOSA1 by Infineon Technologies AG

Overview of FF400R06KE3HOSA1 by Infineon Technologies AG

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Price & Stock for FF400R06KE3HOSA1

Part # Distributor Description Stock Price Buy
DISTI # 448-FF400R06KE3HOSA1-ND
DigiKey IGBT MOD 600V 500A 1250W Min Qty: 1 Lead time: 26 Weeks Container: Tray 56
In Stock
  • 1 $159.3800
  • 10 $149.2810
  • 30 $143.6690
$143.6690 / $159.3800 Buy Now
DISTI # 71241260
Verical Trans IGBT Module N-CH 600V 500A 1250W 7-Pin 62MM-1 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2330 Americas - 1
  • 1 $145.0000
$145.0000 Buy Now
DISTI # FF400R06KE3HOSA1
Avnet Americas Transistor IGBT Module N-CH 600V 500A ±20V Screw Tray - Trays (Alt: FF400R06KE3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $172.2515
$172.2515 Buy Now
DISTI # 13AC8653
Newark Igbt, Module, N-Ch, 600V, 500A, Continuous Collector Current:500A, Collector Emitter Saturation Voltage:1.45V, Power Dissipation:1.25Kw, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Infineon FF400R06KE3HOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $202.2800
$202.2800 Buy Now
Future Electronics FF400R06KE3 Series 600 V 400 A 1250 W Trench Field Stop IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray 1700
Tray
  • 10 $145.7200
  • 20 $144.3900
  • 30 $143.0700
$143.0700 / $145.7200 Buy Now
Future Electronics FF400R06KE3 Series 600 V 400 A 1250 W Trench Field Stop IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Bulk 0
Bulk
  • 1 $141.7500
  • 3 $139.7100
  • 5 $138.7700
  • 15 $136.7700
  • 25 $135.0000
$135.0000 / $141.7500 Buy Now
Ameya Holding Limited 62mm C-Serien module with trench/fieldstop IGBT3 and Emitter Controlled3 di 215
RFQ
DISTI # C1S322000102185
Chip1Stop Trans IGBT Module N-CH 600V 500A 1250000mW 7-Pin 62MM-1 Tray RoHS: Compliant pbFree: Yes Container: Tray 1
  • 1 $116.0000
$116.0000 Buy Now
DISTI # SP000085375
EBV Elektronik Transistor IGBT Module N-CH 600V 500A �20V Screw Tray (Alt: SP000085375) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 2726137
element14 Asia-Pacific IGBT, MODULE, N-CH, 600V, 500A RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $169.5856
  • 5 $161.2296
  • 10 $152.8737
$152.8737 / $169.5856 Buy Now
EnteerMall Trans IGBT Module N-CH 600V 500A 1250W 7-Pin 62MM-1 Tray 448
  • 1 $107.3600
  • 25 $105.2100
  • 50 $103.1100
  • 100 $98.9900
$98.9900 / $107.3600 Buy Now
DISTI # 2726137
Farnell IGBT, MODULE, N-CH, 600V, 500A RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 0
  • 1 $157.6875
  • 5 $149.9243
  • 10 $142.1484
$142.1484 / $157.6875 Buy Now

Part Details for FF400R06KE3HOSA1

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FF400R06KE3HOSA1 Part Data Attributes

FF400R06KE3HOSA1 Infineon Technologies AG
Buy Now Datasheet
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FF400R06KE3HOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 500A I(C), 600V V(BR)CES, N-Channel, MODULE-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 500 A
Collector-Emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 190 ns

Alternate Parts for FF400R06KE3HOSA1

This table gives cross-reference parts and alternative options found for FF400R06KE3HOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF400R06KE3HOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FF400R07KE4HOSA1 Insulated Gate Bipolar Transistor, 485A I(C), 650V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF400R06KE3HOSA1 vs FF400R07KE4HOSA1
APTGT400A60D3G Insulated Gate Bipolar Transistor, 500A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc FF400R06KE3HOSA1 vs APTGT400A60D3G

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