-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for FF45MR12W1M1B11BOMA1 by Infineon Technologies AG
Overview of FF45MR12W1M1B11BOMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FF45MR12W1M1B11BOMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Rochester Electronics | FFXMR12 - LOW POWER EASY RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 32 |
|
$51.1200 / $60.1400 | Buy Now |
|
DISTI #
FF45MR12W1M1B11
|
TME | Module, transistor/transistor, 1.2kV, 25A, AG-EASY1BM-2, Idm: 50A Min Qty: 1 | 1 |
|
$81.0900 / $93.6600 | Buy Now |
Part Details for FF45MR12W1M1B11BOMA1
FF45MR12W1M1B11BOMA1 CAD Models
FF45MR12W1M1B11BOMA1 Part Data Attributes
|
|
FF45MR12W1M1B11BOMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
FF45MR12W1M1B11BOMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-10 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 14 pF | |
| Gate-Emitter Thr Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X10 | |
| Number of Elements | 2 | |
| Number of Terminals | 10 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 55300 ns | |
| Turn-on Time-Nom (ton) | 14100 ns | |
| VCEsat-Max | 5.55 V |