Part Details for FGB5N60UNDF by Fairchild Semiconductor Corporation
Overview of FGB5N60UNDF by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FGB5N60UNDF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1250 |
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RFQ | ||
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Rochester Electronics | Insulated Gate Bipolar Transistor, 10A, 600V, N-Channel, TO-263AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 730 |
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$0.7927 / $0.9326 | Buy Now |
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ComSIT USA | 600 V, 5 A SHORT CIRCUIT RATED IGBT Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant |
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RFQ |
Part Details for FGB5N60UNDF
FGB5N60UNDF CAD Models
FGB5N60UNDF Part Data Attributes
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FGB5N60UNDF
Fairchild Semiconductor Corporation
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Datasheet
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FGB5N60UNDF
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, D2PAK-3/2
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | D2PAK | |
Package Description | ROHS COMPLIANT, D2PAK-3/2 | |
Pin Count | 2 | |
Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 10 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 202 ns | |
Gate-Emitter Thr Voltage-Max | 8.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 73.5 W | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 151.6 ns | |
Turn-on Time-Nom (ton) | 7.5 ns |