Datasheets
FGB7N60UNDF by:

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, D2PAK-3/2

Part Details for FGB7N60UNDF by Fairchild Semiconductor Corporation

Overview of FGB7N60UNDF by Fairchild Semiconductor Corporation

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Applications Industrial Automation Motor control systems

Price & Stock for FGB7N60UNDF

Part # Distributor Description Stock Price Buy
DISTI # 2156-FGB7N60UNDF-ND
DigiKey IGBT NPT 600V 14A TO263 Min Qty: 285 Container: Bulk MARKETPLACE PRODUCT 285
In Stock
  • 285 $1.1100
$1.1100 Buy Now
Rochester Electronics FGB7N60 - Insulated Gate Bipolar Transistor, 14A, 600V, N-Channel, TO-263AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 994
  • 1 $1.1300
  • 25 $1.1000
  • 100 $1.0600
  • 500 $1.0100
  • 1,000 $0.9567
$0.9567 / $1.1300 Buy Now

Part Details for FGB7N60UNDF

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FGB7N60UNDF Part Data Attributes:

FGB7N60UNDF Fairchild Semiconductor Corporation
Buy Now Datasheet
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FGB7N60UNDF Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, D2PAK-3/2
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description ROHS COMPLIANT, D2PAK-3/2
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR
Collector Current-Max (IC) 14 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 89 ns
Gate-Emitter Thr Voltage-Max 8.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83 W
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 146.8 ns
Turn-on Time-Nom (ton) 10.3 ns

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