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IGBT, 650V, 20A, 2.2V, TO-247 High Speed Field Stop, 450-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
07R8546
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Newark | Igbt Single Rohs Compliant: Yes |Onsemi FGH20N60SFDTU RoHS: Compliant Min Qty: 120 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.0700 / $2.7900 | Buy Now |
DISTI #
41T0508
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Newark | Igbt, n Channel, fast, w/Dio,600V,40A, to247, Continuous Collector Current:40A, Collector Emitter Saturation Voltage:600V, Power Dissipation:165W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C Rohs Compliant: Yes |Onsemi FGH20N60SFDTU RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
DISTI #
FGH20N60SFDTU-ND
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DigiKey | IGBT FIELD STOP 600V 40A TO247-3 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
103 In Stock |
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$2.9043 / $3.6700 | Buy Now |
DISTI #
FGH20N60SFDTU
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Avnet Americas | Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247AB Tube - Rail/Tube (Alt: FGH20N60SFDTU) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 37 Partner Stock |
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RFQ | |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$1.8500 / $2.4000 | Buy Now |
DISTI #
FGH20N60SFDTU
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ |
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FGH20N60SFDTU
onsemi
Buy Now
Datasheet
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Compare Parts:
FGH20N60SFDTU
onsemi
IGBT, 650V, 20A, 2.2V, TO-247 High Speed Field Stop, 450-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Manufacturer Package Code | 340CK | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 40 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 48 ns | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 165 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 123 ns | |
Turn-on Time-Nom (ton) | 28 ns |