Datasheets
FGH40T65SHDF_F155 by:

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB, ROHS COMPLIANT, PLASTIC, TO-247G03, 3 PIN

Part Details for FGH40T65SHDF_F155 by Fairchild Semiconductor Corporation

Overview of FGH40T65SHDF_F155 by Fairchild Semiconductor Corporation

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Available Datasheets

Part # Manufacturer Description Datasheet
MSP430F155IPMR Texas Instruments 16-bit Ultra-Low-Power MCU, 16kB Flash, 512B RAM, 12-Bit ADC, Dual 12-Bit DAC, USART, I2C, DMA 64-LQFP -40 to 85
MSP430F155IRTDR Texas Instruments 16-bit Ultra-Low-Power MCU, 16kB Flash, 512B RAM, 12-Bit ADC, Dual 12-Bit DAC, USART, I2C, DMA 64-VQFN -40 to 85
MSP430F155IRTDT Texas Instruments 16-bit Ultra-Low-Power MCU, 16kB Flash, 512B RAM, 12-Bit ADC, Dual 12-Bit DAC, USART, I2C, DMA 64-VQFN -40 to 85

Part Details for FGH40T65SHDF_F155

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FGH40T65SHDF_F155 Part Data Attributes

FGH40T65SHDF_F155 Fairchild Semiconductor Corporation
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FGH40T65SHDF_F155 Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB, ROHS COMPLIANT, PLASTIC, TO-247G03, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-247
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Manufacturer Package Code TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 268 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 126 ns
Turn-on Time-Nom (ton) 49 ns

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