Part Details for FGH40T65SHDF_F155 by Fairchild Semiconductor Corporation
Overview of FGH40T65SHDF_F155 by Fairchild Semiconductor Corporation
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- Part Data Attributes: (Available)
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Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
MSP430F155IPMR | Texas Instruments | 16-bit Ultra-Low-Power MCU, 16kB Flash, 512B RAM, 12-Bit ADC, Dual 12-Bit DAC, USART, I2C, DMA 64-LQFP -40 to 85 | |
MSP430F155IRTDR | Texas Instruments | 16-bit Ultra-Low-Power MCU, 16kB Flash, 512B RAM, 12-Bit ADC, Dual 12-Bit DAC, USART, I2C, DMA 64-VQFN -40 to 85 | |
MSP430F155IRTDT | Texas Instruments | 16-bit Ultra-Low-Power MCU, 16kB Flash, 512B RAM, 12-Bit ADC, Dual 12-Bit DAC, USART, I2C, DMA 64-VQFN -40 to 85 |
Part Details for FGH40T65SHDF_F155
FGH40T65SHDF_F155 CAD Models
FGH40T65SHDF_F155 Part Data Attributes
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FGH40T65SHDF_F155
Fairchild Semiconductor Corporation
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FGH40T65SHDF_F155
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB, ROHS COMPLIANT, PLASTIC, TO-247G03, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-247 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Manufacturer Package Code | TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 80 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 7.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 268 W | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 126 ns | |
Turn-on Time-Nom (ton) | 49 ns |