Part Details for FGH40T65SHDF_F155 by onsemi
Overview of FGH40T65SHDF_F155 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FGH40T65SHDF_F155
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FGH40T65SHDF-F155
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Avnet Americas | Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Rail - Rail/Tube (Alt: FGH40T65SHDF-F155) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 21 Weeks, 0 Days Container: Tube | 0 |
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$1.7324 / $2.0677 | Buy Now |
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DISTI #
FGH40T65SHDF-F155
|
Avnet Asia | Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Rail (Alt: FGH40T65SHDF-F155) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 21 Weeks, 0 Days | 0 |
|
$2.7190 / $4.4100 | Buy Now |
Part Details for FGH40T65SHDF_F155
FGH40T65SHDF_F155 CAD Models
FGH40T65SHDF_F155 Part Data Attributes
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FGH40T65SHDF_F155
onsemi
Buy Now
Datasheet
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Compare Parts:
FGH40T65SHDF_F155
onsemi
650V, 40A Field Stop Trench IGBT, TO-247 3L, 3600-RAIL
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Manufacturer Package Code | TO247G03 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 21 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 268 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 126 ns | |
| Turn-on Time-Nom (ton) | 49 ns |