There are no models available for this part yet.
Overview of FK7VS-12 by Mitsubishi Electric
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
CAD Models for FK7VS-12 by Mitsubishi Electric
Part Data Attributes for FK7VS-12 by Mitsubishi Electric
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|---|---|
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Part Life Cycle Code
|
Transferred
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Ihs Manufacturer
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MITSUBISHI ELECTRIC CORP
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Package Description
|
SMALL OUTLINE, R-PSSO-G2
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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600 V
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Drain Current-Max (ID)
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7 A
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Drain-source On Resistance-Max
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1.63 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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R-PSSO-G2
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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125 W
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Pulsed Drain Current-Max (IDM)
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21 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for FK7VS-12
This table gives cross-reference parts and alternative options found for FK7VS-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FK7VS-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFBC40STRRPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | FK7VS-12 vs IRFBC40STRRPBF |
| STB3NK60ZT4 | N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in D2PAK package | STMicroelectronics | FK7VS-12 vs STB3NK60ZT4 |
| FQB6N60TM | 6.2A, 600V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | FK7VS-12 vs FQB6N60TM |
| 2SK3322-ZJ | Power Field-Effect Transistor, 5.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN | NEC Electronics Group | FK7VS-12 vs 2SK3322-ZJ |
| FQB8N60C | Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | Fairchild Semiconductor Corporation | FK7VS-12 vs FQB8N60C |
| SSW2N60BTM | 2A, 600V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | FK7VS-12 vs SSW2N60BTM |
| 2SK3688-01S | Power Field-Effect Transistor, 16A I(D), 600V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 | Fuji Electric Co Ltd | FK7VS-12 vs 2SK3688-01S |
| IRFBC40SPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | FK7VS-12 vs IRFBC40SPBF |
| FQB5N60 | Power Field-Effect Transistor, 5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FK7VS-12 vs FQB5N60 |
| 2SK3930-01S | Power Field-Effect Transistor, 11A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fuji Electric Co Ltd | FK7VS-12 vs 2SK3930-01S |