Part Details for FMD35N03 by FCI Semiconductor
Overview of FMD35N03 by FCI Semiconductor
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Part Details for FMD35N03
FMD35N03 CAD Models
FMD35N03 Part Data Attributes:
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FMD35N03
FCI Semiconductor
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FMD35N03
FCI Semiconductor
Transistor
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Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | FIRST COMPONENTS INTERNATIONAL | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 300 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.0085 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 122 pF | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 57 W | |
Power Dissipation-Max (Abs) | 57 W | |
Pulsed Drain Current-Max (IDM) | 350 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |