Datasheets
FMG2G300US60E by:

Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, PLASTIC, 7PM-HA, 7 PIN

Part Details for FMG2G300US60E by Fairchild Semiconductor Corporation

Overview of FMG2G300US60E by Fairchild Semiconductor Corporation

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Automotive Consumer Electronics Education and Research Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Renewable Energy Entertainment and Gaming Robotics and Drones

Price & Stock for FMG2G300US60E

Part # Distributor Description Stock Price Buy
Quest Components INSULATED GATE BIPOLAR TRANSISTOR, 300A I(C), 600V V(BR)CES, N-CHANNEL 2
  • 1 $32.5163
$32.5163 Buy Now
Rochester Electronics Insulated Gate Bipolar Transistor, 300A, 600V, N-Channel ' RoHS: Compliant Status: Obsolete Min Qty: 1 2
  • 1 $39.2400
  • 25 $38.4500
  • 100 $36.8800
  • 500 $35.3100
  • 1,000 $33.3500
$33.3500 / $39.2400 Buy Now

Part Details for FMG2G300US60E

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FMG2G300US60E Part Data Attributes:

FMG2G300US60E Fairchild Semiconductor Corporation
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FMG2G300US60E Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, PLASTIC, 7PM-HA, 7 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description PLASTIC, 7PM-HA, 7 PIN
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 300 A
Collector-Emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X7
JESD-609 Code e3
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 892 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish TIN
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 480 ns
Turn-on Time-Nom (ton) 470 ns
VCEsat-Max 2.7 V

Alternate Parts for FMG2G300US60E

This table gives cross-reference parts and alternative options found for FMG2G300US60E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FMG2G300US60E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CM150DY-12H Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, Powerex Power Semiconductors FMG2G300US60E vs CM150DY-12H
MG150H2YS1 TRANSISTOR 150 A, 500 V, N-CHANNEL IGBT, 2-96A4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components FMG2G300US60E vs MG150H2YS1
1MBI600NN-060 Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-4 Fuji Electric Co Ltd FMG2G300US60E vs 1MBI600NN-060
2MBI100L-060 Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN Fuji Electric Co Ltd FMG2G300US60E vs 2MBI100L-060
CM300DU-12H Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, Powerex Power Semiconductors FMG2G300US60E vs CM300DU-12H
2MBI300L-060 Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M217, 7 PIN Fuji Electric Co Ltd FMG2G300US60E vs 2MBI300L-060
BSM50GB60DLCHOSA1 Insulated Gate Bipolar Transistor, MOUDLE-7 Infineon Technologies AG FMG2G300US60E vs BSM50GB60DLCHOSA1
CM300HA-12H Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel Powerex Power Semiconductors FMG2G300US60E vs CM300HA-12H
MG300H1US1 TRANSISTOR 300 A, 500 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components FMG2G300US60E vs MG300H1US1
1MBI400L-060 Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, M116, 4 PIN Fuji Electric Co Ltd FMG2G300US60E vs 1MBI400L-060

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