Part Details for FMG2G300US60E by Fairchild Semiconductor Corporation
Overview of FMG2G300US60E by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FMG2G300US60E
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | INSULATED GATE BIPOLAR TRANSISTOR, 300A I(C), 600V V(BR)CES, N-CHANNEL | 2 |
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$32.5163 | Buy Now |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 300A, 600V, N-Channel ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2 |
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$33.3500 / $39.2400 | Buy Now |
Part Details for FMG2G300US60E
FMG2G300US60E CAD Models
FMG2G300US60E Part Data Attributes:
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FMG2G300US60E
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FMG2G300US60E
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, PLASTIC, 7PM-HA, 7 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | PLASTIC, 7PM-HA, 7 PIN | |
Pin Count | 7 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 300 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PUFM-X7 | |
JESD-609 Code | e3 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 892 W | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 480 ns | |
Turn-on Time-Nom (ton) | 470 ns | |
VCEsat-Max | 2.7 V |
Alternate Parts for FMG2G300US60E
This table gives cross-reference parts and alternative options found for FMG2G300US60E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FMG2G300US60E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CM150DY-12H | Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, | Powerex Power Semiconductors | FMG2G300US60E vs CM150DY-12H |
MG150H2YS1 | TRANSISTOR 150 A, 500 V, N-CHANNEL IGBT, 2-96A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | FMG2G300US60E vs MG150H2YS1 |
1MBI600NN-060 | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-4 | Fuji Electric Co Ltd | FMG2G300US60E vs 1MBI600NN-060 |
2MBI100L-060 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN | Fuji Electric Co Ltd | FMG2G300US60E vs 2MBI100L-060 |
CM300DU-12H | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, | Powerex Power Semiconductors | FMG2G300US60E vs CM300DU-12H |
2MBI300L-060 | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M217, 7 PIN | Fuji Electric Co Ltd | FMG2G300US60E vs 2MBI300L-060 |
BSM50GB60DLCHOSA1 | Insulated Gate Bipolar Transistor, MOUDLE-7 | Infineon Technologies AG | FMG2G300US60E vs BSM50GB60DLCHOSA1 |
CM300HA-12H | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel | Powerex Power Semiconductors | FMG2G300US60E vs CM300HA-12H |
MG300H1US1 | TRANSISTOR 300 A, 500 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | FMG2G300US60E vs MG300H1US1 |
1MBI400L-060 | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, M116, 4 PIN | Fuji Electric Co Ltd | FMG2G300US60E vs 1MBI400L-060 |