Datasheets
FP75R07N2E4B11BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-31

Part Details for FP75R07N2E4B11BOSA1 by Infineon Technologies AG

Overview of FP75R07N2E4B11BOSA1 by Infineon Technologies AG

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Price & Stock for FP75R07N2E4B11BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-FP75R07N2E4B11BOSA1-IT-ND
DigiKey IGBT MODULE 650V 75A Min Qty: 4 Lead time: 99 Weeks Container: Bulk MARKETPLACE PRODUCT 28
In Stock
  • 4 $81.1800
$81.1800 Buy Now
DISTI # FP75R07N2E4B11BOSA1-ND
DigiKey IGBT MODULE 650V 75A Min Qty: 4 Lead time: 99 Weeks Container: Bulk Limited Supply - Call
Buy Now
DISTI # FP75R07N2E4B11BOSA
Avnet Americas LOW POWER ECONO - Trays (Alt: FP75R07N2E4B11BOSA) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Container: Tray 0
RFQ
Bristol Electronics   10
RFQ
Quest Components   8
  • 1 $111.4720
  • 3 $105.8984
  • 6 $100.3248
$100.3248 / $111.4720 Buy Now
Rochester Electronics FP75R07 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 28
  • 1 $81.9600
  • 25 $80.3200
  • 100 $77.0400
  • 500 $73.7700
  • 1,000 $69.6700
$69.6700 / $81.9600 Buy Now

Part Details for FP75R07N2E4B11BOSA1

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FP75R07N2E4B11BOSA1 Part Data Attributes:

FP75R07N2E4B11BOSA1 Infineon Technologies AG
Buy Now Datasheet
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FP75R07N2E4B11BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-31
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-31
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 650 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X31
Number of Elements 7
Number of Terminals 31
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 320 ns
Turn-on Time-Nom (ton) 45 ns

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