There are no models available for this part yet.
Overview of FQA10N80C_F109 by onsemi
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 3 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 3 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Automotive
Motor control systems
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
R5F109AAKSP#V0G | Renesas Electronics Corporation | Microcontrollers with Low Consumption Current for Automotive Applications | |
R5F10968JSP#X0 | Renesas Electronics Corporation | Microcontrollers with Low Consumption Current for Automotive Applications | |
R5F1096AKSP#H0 | Renesas Electronics Corporation | Microcontrollers with Low Consumption Current for Automotive Applications |
CAD Models for FQA10N80C_F109 by onsemi
Part Data Attributes for FQA10N80C_F109 by onsemi
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
ON SEMICONDUCTOR
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
Manufacturer Package Code
|
TO3PN03A
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
57 Weeks, 3 Days
|
Samacsys Manufacturer
|
onsemi
|
Avalanche Energy Rating (Eas)
|
920 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
800 V
|
Drain Current-Max (ID)
|
10 A
|
Drain-source On Resistance-Max
|
1.1 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PSFM-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
240 W
|
Pulsed Drain Current-Max (IDM)
|
40 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for FQA10N80C_F109
This table gives cross-reference parts and alternative options found for FQA10N80C_F109. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQA10N80C_F109, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQA10N80C-F109 | Power MOSFET, N-Channel, QFET®, 800 V, 10 A, 1.1 Ω, TO-3P, TO-3PN 3L, 450-TUBE | onsemi | FQA10N80C_F109 vs FQA10N80C-F109 |
FQA10N80C | 10A, 800V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | Rochester Electronics LLC | FQA10N80C_F109 vs FQA10N80C |
FQA10N80C_F109 | N-Channel QFET® MOSFET 800V, 10A, 1.1Ω, 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED, 450/RAIL | Fairchild Semiconductor Corporation | FQA10N80C_F109 vs FQA10N80C_F109 |
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