Part Details for FQA8N90C_F109 by onsemi
Overview of FQA8N90C_F109 by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for FQA8N90C_F109
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FQA8N90C-F109
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Avnet Americas | Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P Rail - Rail/Tube (Alt: FQA8N90C-F109) RoHS: Compliant Min Qty: 538 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 900 Partner Stock |
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$1.1532 / $1.3764 | Buy Now |
Part Details for FQA8N90C_F109
FQA8N90C_F109 CAD Models
FQA8N90C_F109 Part Data Attributes
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FQA8N90C_F109
onsemi
Buy Now
Datasheet
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Compare Parts:
FQA8N90C_F109
onsemi
N-Channel QFET® MOSFET 900V, 8.0A, 1.9Ω, TO-3PN 3L, 3600-RAIL
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Manufacturer Package Code | TO3PN03A | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 850 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 1.9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 240 W | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQA8N90C_F109
This table gives cross-reference parts and alternative options found for FQA8N90C_F109. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQA8N90C_F109, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQA8N90C-F109 | Power MOSFET, N-Channel, QFET®, 900 V, 8.0 A, 1.9 Ω, TO-3P, TO-3PN 3L, 450-TUBE | onsemi | FQA8N90C_F109 vs FQA8N90C-F109 |
| FQA8N90C | Power Field-Effect Transistor, 8A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | FQA8N90C_F109 vs FQA8N90C |
| FQA8N90C | 8A, 900V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | Rochester Electronics LLC | FQA8N90C_F109 vs FQA8N90C |
| FQA6N90 | Power Field-Effect Transistor, 6.4A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | FQA8N90C_F109 vs FQA6N90 |