Datasheets
FQAF44N10 by:

Power Field-Effect Transistor, 33A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

Part Details for FQAF44N10 by Fairchild Semiconductor Corporation

Overview of FQAF44N10 by Fairchild Semiconductor Corporation

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Price & Stock for FQAF44N10

Part # Distributor Description Stock Price Buy
Rochester Electronics 33A, 100V, 0.039ohm, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 1044
  • 1 $1.1400
  • 25 $1.1100
  • 100 $1.0700
  • 500 $1.0200
  • 1,000 $0.9669
$0.9669 / $1.1400 Buy Now

Part Details for FQAF44N10

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FQAF44N10 Part Data Attributes

FQAF44N10 Fairchild Semiconductor Corporation
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FQAF44N10 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 33A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-3PF
Package Description TO-3PF, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 530 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 33 A
Drain-source On Resistance-Max 0.039 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 85 W
Pulsed Drain Current-Max (IDM) 132 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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