Part Details for FQB10N60C by Fairchild Semiconductor Corporation
Overview of FQB10N60C by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for FQB10N60C
FQB10N60C CAD Models
FQB10N60C Part Data Attributes
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FQB10N60C
Fairchild Semiconductor Corporation
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Datasheet
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FQB10N60C
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 9.5 A | |
| Drain-source On Resistance-Max | 0.73 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 38 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB10N60C
This table gives cross-reference parts and alternative options found for FQB10N60C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB10N60C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFBC40STRRPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | FQB10N60C vs IRFBC40STRRPBF |
| STB3NK60ZT4 | N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in D2PAK package | STMicroelectronics | FQB10N60C vs STB3NK60ZT4 |
| FQB6N60TM | 6.2A, 600V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | FQB10N60C vs FQB6N60TM |
| 2SK3322-ZJ | Power Field-Effect Transistor, 5.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN | NEC Electronics Group | FQB10N60C vs 2SK3322-ZJ |
| FQB8N60C | Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | Fairchild Semiconductor Corporation | FQB10N60C vs FQB8N60C |
| SSW2N60BTM | 2A, 600V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | FQB10N60C vs SSW2N60BTM |
| 2SK3688-01S | Power Field-Effect Transistor, 16A I(D), 600V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 | Fuji Electric Co Ltd | FQB10N60C vs 2SK3688-01S |
| IRFBC40SPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | FQB10N60C vs IRFBC40SPBF |
| FQB5N60 | Power Field-Effect Transistor, 5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FQB10N60C vs FQB5N60 |
| 2SK3930-01S | Power Field-Effect Transistor, 11A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fuji Electric Co Ltd | FQB10N60C vs 2SK3930-01S |